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DTM6C

Onsemi

DTM6C by Onsemi

DTM6C by Onsemi is a TRIAC with 1.5V max on-state voltage, 50mA max DC gate trigger current, and 2mA max leakage current. It operates b/w -40 to 125 °C and has a max RMS on-state current of 6A. Ideal for AC power control applications.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 2,267 parts In-Stock

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Native Components

USA . 417 parts In-Stock

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Northwest PG Solutions

USA . 113 parts In-Stock

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SupplyDigital Components

Austria . 7,507 parts In-Stock

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TANS Electronics

Latvia . 3,419 parts In-Stock

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Kulean Microsystems

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Corphita

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Problanco Electronics

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UHIMA Technologies

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Corohmni

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Overview

Experience the unmatched quality and reliability of Onsemi with the DTM6C, a top-of-the-line Triode For Alternating Current (TRIAC) that exceeds expectations in performance and longevity. From powerful on-state voltage to precise gate trigger current, this product delivers superior results across various applications. Trust Onsemi's expertise and innovation to provide you with seamless functionality and durability, making the DTM6C the ultimate choice for your electronic needs. Elevate your projects with the unparalleled value and benefits of the DTM6C by Onsemi.

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

Low on-state voltage ensures efficient operation and minimizes power loss, making this product energy-efficient.

Maximum DC Gate Trigger Current: 50 mA

The high gate trigger current allows for reliable switching performance and ensures proper activation of the TRIAC.

Maximum Leakage Current: 2 mA

Low leakage current indicates minimal power wastage when the TRIAC is in the off state, improving overall efficiency.

Maximum Operating Temperature: 125 °C

Wide operating temperature range ensures reliability and performance under varying environmental conditions.

Trigger Device Type: TRIAC

TRIAC trigger device type offers precise control and efficient switching for AC applications.

Minimum Operating Temperature: -40 °C

Allows for operation in cold environments without compromising functionality.

Maximum RMS On-state Current: 6 A

High on-state current rating makes this TRIAC suitable for applications requiring higher power handling capabilities.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage ensures efficient activation and reliable performance of the TRIAC.

Repetitive Peak Off-state Voltage: 200 V

Allows the TRIAC to withstand high off-state voltages, making it suitable for a variety of applications.

Minimum Critical Rate of Rise of Commutation Voltage: 10 V/us

Fast rate of rise of commutation voltage ensures quick and reliable switching, ideal for demanding applications.

Maximum Holding Current: 50 mA

The high holding current ensures the TRIAC remains in the on state when required, preventing accidental turn-off.

Technical Specifications

Triode For Alternating Current (TRIAC) DTM6C attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

10 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.5 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

6 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTM6C Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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