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DTA2B

Onsemi

DTA2B by Onsemi

DTA2B by Onsemi is a TRIAC with max on-state voltage of 2.6V, DC gate trigger current of 15mA, and max leakage current of 0.1mA. It operates b/w -40 °C to 110°C, ideal for AC power control applications requiring a max RMS on-state current of 2A and repetitive peak off-state voltage of 100V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,180 parts In-Stock

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Digiode

USA . 582 parts In-Stock

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SupplyDigital Components

Austria . 6,324 parts In-Stock

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TANS Electronics

Latvia . 6,020 parts In-Stock

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Problanco Electronics

Mexico . 5,514 parts In-Stock

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Kulean Microsystems

USA . 2,387 parts In-Stock

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Northwest PG Solutions

USA . 1,217 parts In-Stock

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$3.925

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UHIMA Technologies

Türkiye . 471 parts In-Stock

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Corphita

USA . 451 parts In-Stock

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Corohmni

South Africa . 229 parts In-Stock

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Native Components

USA . 64 parts In-Stock

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Overview

Discover the powerful DTA2B by Onsemi, a top-quality Triode For Alternating Current (TRIAC) that delivers unmatched performance and reliability. Manufactured by Onsemi, known for their cutting-edge technology and superior products, this TRIAC is perfect for a wide range of applications. From lighting controls to motor speed regulation, the DTA2B offers customers exceptional value with its high efficiency, low leakage current, and precise triggering capabilities. Upgrade your projects today with the DTA2B and experience the difference quality makes.

Feature Benefit Bullets

Maximum On-state Voltage: 2.6 V

Low on-state voltage ensures efficient operation and minimal power loss.

Maximum DC Gate Trigger Current: 15 mA

The low gate trigger current requirement allows for easy control of the device.

Maximum Leakage Current: 0.1 mA

Low leakage current helps in maintaining high efficiency and preventing overheating.

Maximum Operating Temperature: 110 °C

Wide operating temperature range allows for versatile application in various environments.

Trigger Device Type: TRIAC

TRIACs are known for their high reliability and precision in switching AC currents.

Minimum Operating Temperature: -40 °C

Ability to operate in low temperatures makes it suitable for a wide range of applications.

Maximum RMS On-state Current: 2 A

High on-state current rating allows for handling of heavy loads with ease.

Maximum DC Gate Trigger Voltage: 2.3 V

Low gate trigger voltage ensures efficient control and operation of the device.

Repetitive Peak Off-state Voltage: 100 V

High off-state voltage rating provides safety and reliability in high voltage applications.

Maximum Holding Current: 25 mA

Capable of holding current up to 25 mA, ensuring stable operation in various conditions.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA2B attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

2.3 V

Maximum Holding Current:

25 mA

Maximum Leakage Current:

.1 mA

Maximum On-state Voltage:

2.6 V

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

2 A

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA2B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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