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DTA2E

Onsemi

DTA2E by Onsemi

DTA2E by Onsemi is a TRIAC with 2A RMS on-state current, 400V repetitive peak off-state voltage, and 15mA max DC gate trigger current. It operates b/w -40 °C to 110°C, making it suitable for AC power control applications like dimmers and motor speed controllers.

Median Price

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Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

1k+

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Digiode

USA . 1,784 parts In-Stock

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Vyrian

USA . 1,641 parts In-Stock

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TANS Electronics

Latvia . 5,410 parts In-Stock

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Problanco Electronics

Mexico . 5,245 parts In-Stock

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Kulean Microsystems

USA . 4,295 parts In-Stock

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SupplyDigital Components

Austria . 2,220 parts In-Stock

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Corphita

USA . 1,387 parts In-Stock

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Northwest PG Solutions

USA . 991 parts In-Stock

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Native Components

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Corohmni

South Africa . 474 parts In-Stock

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UHIMA Technologies

Türkiye . 288 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi's DTA2E, a top-of-the-line Triode For Alternating Current (TRIAC) that is designed to exceed industry standards. Perfect for a wide range of applications, this TRIAC offers unparalleled performance and efficiency. From its low leakage current to its high maximum RMS on-state current, the DTA2E provides unmatched value and benefits to customers looking for a reliable and durable solution. Trust in Onsemi for all your TRIAC needs and experience the difference for yourself.

Feature Benefit Bullets

Maximum On-state Voltage: 2.6 V

Low on-state voltage helps in minimizing power losses and ensures efficient operation of the TRIAC.

Maximum DC Gate Trigger Current: 15 mA

The low gate trigger current requirement makes it suitable for low-power applications and enhances the TRIAC's versatility.

Maximum Leakage Current: 0.1 mA

Low leakage current ensures minimal power wastage and helps in maintaining the efficiency of the device.

Maximum Operating Temperature: 110 °C

Wide operating temperature range allows for reliable performance in various environmental conditions.

Trigger Device Type: TRIAC

TRIACs are commonly used in AC power control applications due to their bidirectional conduction capabilities and this device type ensures compatibility with such systems.

Minimum Operating Temperature: -40 °C

The ability to operate at low temperatures makes it suitable for use in cold environments or applications that require extended temperature ranges.

Maximum RMS On-state Current: 2 A

High on-state current rating allows the TRIAC to handle larger loads and power requirements.

Maximum DC Gate Trigger Voltage: 2.3 V

Low gate trigger voltage ensures efficient control of the TRIAC and minimizes power consumption in the triggering circuit.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage rating ensures compatibility with a wide range of AC voltage levels and applications.

Maximum Holding Current: 25 mA

The holding current specification indicates the minimum current required to maintain the ON state, ensuring stable operation of the TRIAC.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA2E attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

2.3 V

Maximum Holding Current:

25 mA

Maximum Leakage Current:

.1 mA

Maximum On-state Voltage:

2.6 V

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

2 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA2E Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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