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DTA2C

Onsemi

DTA2C by Onsemi

DTA2C by Onsemi is a TRIAC with 2A RMS on-state current, 15mA DC gate trigger current, and 200V repetitive peak off-state voltage. It operates b/w -40 °C to 110°C, making it suitable for AC power control applications like dimmers and motor speed controllers.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,043 parts In-Stock

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Vyrian

USA . 1,320 parts In-Stock

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TANS Electronics

Latvia . 7,707 parts In-Stock

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SupplyDigital Components

Austria . 6,662 parts In-Stock

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Kulean Microsystems

USA . 3,153 parts In-Stock

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Problanco Electronics

Mexico . 1,228 parts In-Stock

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Native Components

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Corphita

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UHIMA Technologies

Türkiye . 597 parts In-Stock

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Corohmni

South Africa . 189 parts In-Stock

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Northwest PG Solutions

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Overview

Experience the power of the DTA2C by Onsemi, a top-quality TRIAC that delivers unmatched performance and reliability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this TRIAC is perfect for a wide range of applications. With a maximum on-state voltage of 2.6 V and a maximum RMS on-state current of 2 A, the DTA2C offers customers superior value, efficiency, and precision. Whether you're looking to control AC power in lighting, heating, or motor speed applications, the DTA2C has you covered. Upgrade to the DTA2C today and experience the difference for yourself.

Feature Benefit Bullets

Maximum On-state Voltage: 2.6 V

Low on-state voltage helps in reducing power losses and improving efficiency.

Maximum DC Gate Trigger Current: 15 mA

Allows for reliable switching of the TRIAC without excessive current input.

Maximum Leakage Current: 0.1 mA

Low leakage current ensures minimal power wastage when the TRIAC is in the off-state.

Maximum Operating Temperature: 110 °C

Wide operating temperature range enables the TRIAC to function in various environmental conditions.

Trigger Device Type: TRIAC

Specifically designed for alternating current applications, ensuring compatibility and reliability.

Minimum Operating Temperature: -40 °C

Allows for usage in cold environments without compromising performance.

Maximum RMS On-state Current: 2 A

Capable of handling high current loads, making it suitable for a variety of applications.

Maximum DC Gate Trigger Voltage: 2.3 V

Low gate trigger voltage ensures efficient control of the TRIAC.

Repetitive Peak Off-state Voltage: 200 V

Provides a high off-state voltage rating for enhanced safety and reliability.

Maximum Holding Current: 25 mA

Ensures that the TRIAC remains in the on-state even in the presence of external disturbances.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA2C attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

2.3 V

Maximum Holding Current:

25 mA

Maximum Leakage Current:

.1 mA

Maximum On-state Voltage:

2.6 V

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

2 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA2C Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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