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MAC4DLM-001

Onsemi

MAC4DLM-001 by Onsemi

MAC4DLM-001 by Onsemi is a single TRIAC with 3 terminals, max. RMS on-state current of 4A, and max. DC gate trigger voltage of 1.3V. It operates b/w -40 to 110 °C and is ideal for applications requiring a 600V repetitive peak off-state voltage such as lighting controls and motor speed control systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,925 parts In-Stock

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Digiode

USA . 1,141 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 18,402 parts In-Stock

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Kulean Microsystems

USA . 8,263 parts In-Stock

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SupplyDigital Components

Austria . 3,638 parts In-Stock

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Problanco Electronics

Mexico . 2,643 parts In-Stock

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Corphita

USA . 1,819 parts In-Stock

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Corohmni

South Africa . 449 parts In-Stock

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UHIMA Technologies

Türkiye . 69 parts In-Stock

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TANS Electronics

Latvia . 26 parts In-Stock

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Overview

Unlock the power of reliable and efficient electrical control with the MAC4DLM-001 by Onsemi. Designed with precision and quality in mind, this TRIAC device offers seamless operation and high performance in a variety of applications. From lighting control to motor speed regulation, this product provides exceptional value and benefits to customers seeking a reliable solution for their electronic needs. Trust in Onsemi's reputation for excellence and choose the MAC4DLM-001 for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the triode, ensuring long-term reliability and ease of handling during installation.

Maximum DC Gate Trigger Current: 3 mA

Allows for precise control and triggering of the triode, making it suitable for a variety of applications that require low gate trigger current.

Configuration: SINGLE

Simplifies the circuit design and integration of the triode into different electronic systems, reducing complexity and potential points of failure.

Package Shape: RECTANGULAR

Facilitates easy mounting and placement of the triode on circuit boards or within electronic devices, optimizing space utilization and layout efficiency.

Terminal Form: THROUGH-HOLE

Enables secure and stable connections with other components on the circuit board, ensuring reliable performance and reducing the risk of loose connections.

Maximum Leakage Current: 2 mA

Helps in minimizing power loss and improving overall efficiency of the triode, making it a cost-effective choice for various electronic applications.

No. of Terminals: 3

Provides the necessary connections for the triode to function effectively in a circuit, offering versatility in circuit design and integration.

Package Style: IN-LINE

Offers easy compatibility with standard circuit layouts and designs, facilitating the seamless integration of the triode into different electronic systems.

Maximum Operating Temperature: 110 °C

Ensures reliable performance even under high temperature conditions, making the triode suitable for a wide range of industrial and commercial applications.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

Provides precise and efficient triggering capabilities, enhancing the overall control and performance of the triode in various AC power control applications.

Minimum Operating Temperature: -40 °C

Allows the triode to operate effectively in extreme cold environments, expanding its usability in diverse applications and settings.

Terminal Finish: TIN LEAD

Ensures reliable and low-resistance electrical connections, reducing signal loss and enhancing the overall performance of the triode in different circuits.

Terminal Position: SINGLE

Simplifies the installation process and minimizes the risk of incorrect connections, ensuring proper functioning and longevity of the triode in the circuit.

Maximum RMS On-state Current: 4 A

Capable of handling high current loads with ease, making the triode suitable for power control applications that require robust and reliable performance.

Maximum DC Gate Trigger Voltage: 1.3 V

Requires low gate trigger voltage for activation, enabling efficient and precise control over the triode in various electronic systems.

Case Connection: MAIN TERMINAL 2

Facilitates easy and secure connection of the triode to the main circuit, ensuring stable operation and efficient power control in the system.

Repetitive Peak Off-state Voltage: 600 V

Can handle high off-state voltages, providing robust protection and reliable performance in applications where voltage spikes or surges are common.

Minimum Critical Rate of Rise of Off-state Voltage: 10 V/us

Ensures rapid response and reliable protection against voltage surges, making the triode ideal for applications that require fast reaction times.

Maximum Holding Current: 15 mA

Supports stable operation and holding of the triode in the off-state, ensuring proper control and reliable performance in various power control applications.

Peak Reflow Temperature °C: 235

Can withstand high reflow temperatures during manufacturing processes, ensuring the durability and integrity of the triode in different assembly environments.

Technical Specifications

Triode For Alternating Current (TRIAC) MAC4DLM-001 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

10 V/us

Maximum DC Gate Trigger Current:

3 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

15 mA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

MAC4DLM-001 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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