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SYAL344

Onsemi

SYAL344 by Onsemi

SYAL344 by Onsemi is a TRIAC with 1.8V max on-state voltage, 40mA max DC gate trigger current, and 1mA max leakage current. It has a repetitive peak off-state voltage of 800V and min critical rate of rise of commutation voltage at 5 V/us. This device is ideal for applications requiring high holding current up to 50000 mA in various AC power control systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 690 parts In-Stock

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Vyrian

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Kulean Microsystems

USA . 7,594 parts In-Stock

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Problanco Electronics

Mexico . 6,364 parts In-Stock

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TANS Electronics

Latvia . 4,573 parts In-Stock

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UHIMA Technologies

Türkiye . 599 parts In-Stock

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Corphita

USA . 465 parts In-Stock

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SupplyDigital Components

Austria . 429 parts In-Stock

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Corohmni

South Africa . 230 parts In-Stock

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Overview

Unlock a world of possibilities with the SYAL344 by Onsemi, a top-of-the-line TRIAC that guarantees superior quality and performance. Designed for a wide range of applications, this versatile component offers unparalleled value to customers seeking reliable and efficient solutions. Trust in Onsemi's reputation for excellence and innovation, and experience the benefits of seamless integration and enhanced functionality that the SYAL344 brings to your projects. Elevate your designs with the best-in-class TRIAC on the market today.

Feature Benefit Bullets

Maximum On-state Voltage: 1.8 V

Low on-state voltage helps in reducing power losses and improving efficiency of the product.

Maximum DC Gate Trigger Current: 40 mA

Higher gate trigger current ensures reliable switching of the TRIAC, making it suitable for various applications.

Maximum Leakage Current: 1 mA

Low leakage current minimizes power wastage and enhances the overall performance of the TRIAC.

Trigger Device Type: TRIAC

Being a TRIAC device allows for bidirectional control of current, making it versatile for AC power control applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish provides good solderability and ensures a reliable connection in circuits.

Repetitive Peak Off-state Voltage: 800 V

High off-state voltage allows the TRIAC to handle higher voltages, making it suitable for industrial and high-power applications.

Minimum Critical Rate of Rise of Commutation Voltage: 5 V/us

Fast rate of rise of commutation voltage ensures quick and efficient switching, improving the overall performance of the TRIAC.

Maximum Holding Current: 50000 mA

High holding current ensures the TRIAC remains in the on-state during operation, providing stability and reliability in various applications.

Technical Specifications

Triode For Alternating Current (TRIAC) SYAL344 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

5 V/us

Maximum DC Gate Trigger Current:

40 mA

Maximum Holding Current:

50000 mA

JESD-609 Code:

e0

Maximum Leakage Current:

1 mA

Maximum On-state Voltage:

1.8 V

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trigger Device Type:

Trade Compliance

SYAL344 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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