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T2800M

Onsemi

T2800M by Onsemi

T2800M by Onsemi is a TRIAC with 600V repetitive peak off-state voltage, 8A max RMS on-state current, and -40 to 125 °C operating temperature range. Ideal for AC power control applications requiring high reliability and performance in various industrial and consumer electronics.

Median Price

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Lifecycle Status

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Digiode

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Prism Electronics

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Bristol Electronics

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LittleDiode

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Problanco Electronics

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TANS Electronics

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Kulean Microsystems

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Corphita

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SupplyDigital Components

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Overview

Experience the superior quality and reliability of Onsemi with the T2800M TRIAC. Designed for a wide range of applications, this versatile device offers customers unparalleled performance and efficiency. With a maximum on-state voltage of 2V and a maximum RMS on-state current of 8A, the T2800M provides exceptional value and benefits to users. Trust Onsemi's expertise in semiconductor manufacturing and revolutionize your projects with the T2800M.

Feature Benefit Bullets

Maximum On-state Voltage: 2 V

The low maximum on-state voltage of 2 V ensures efficient operation and minimal power loss.

Maximum DC Gate Trigger Current: 25 mA

With a high maximum DC gate trigger current of 25 mA, this product provides reliable and stable triggering performance.

Maximum Leakage Current: 2 mA

The low maximum leakage current of 2 mA indicates minimal power loss when the device is in the off-state.

Maximum Operating Temperature: 125 °C

The wide maximum operating temperature range of up to 125 °C allows for versatile usage in various environments.

Trigger Device Type: TRIAC

Being a TRIAC trigger device type, this product is suitable for controlling AC power in a wide range of applications.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this product can withstand harsh cold conditions.

Maximum RMS On-state Current: 8 A

The high maximum RMS on-state current of 8 A enables the product to handle heavy loads efficiently.

Maximum DC Gate Trigger Voltage: 2.5 V

The low maximum DC gate trigger voltage of 2.5 V ensures low power consumption during triggering operations.

Repetitive Peak Off-state Voltage: 600 V

The high repetitive peak off-state voltage of 600 V allows for reliable performance in high voltage applications.

Minimum Critical Rate of Rise of Commutation Voltage: 4 V/us

The minimum critical rate of rise of commutation voltage of 4 V/us ensures fast and efficient switching of the device.

Minimum Critical Rate of Rise of Off-state Voltage: 60 V/us

The minimum critical rate of rise of off-state voltage of 60 V/us indicates a fast turn-off time for the device.

Maximum Holding Current: 30 mA

With a maximum holding current of 30 mA, this product provides good stability in the on-state condition without accidentally turning off.

Technical Specifications

Triode For Alternating Current (TRIAC) T2800M attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

4 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

60 V/us

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

30 mA

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

2 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

T2800M Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-113-4165, 5961011134165

NIIN

011134165

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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