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T2800D

Onsemi

T2800D by Onsemi

T2800D by Onsemi is a single TRIAC with 8A RMS on-state current, 25mA DC gate trigger current, and 400V repetitive peak off-state voltage. Ideal for applications requiring precise AC power control in devices such as dimmers, motor speed controllers, and heating control systems.

Median Price

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Lifecycle Status

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Vyrian

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Bristol Electronics

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Manotoh

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R&J Components

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Beckwith Electronics

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Fibra_Brandt Electronic GMBH

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Connector Distribution Corp

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Right Parts Inc.

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QIE Inc.

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ComSIT Distribution GmbH

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TANS Electronics

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UHIMA Technologies

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Overview

Discover the power of the T2800D by Onsemi, a top-of-the-line TRIAC that guarantees quality and reliability. Manufactured by Onsemi, known for their innovative solutions, this product is perfect for a wide range of applications. With its superior performance and durability, the T2800D offers exceptional value and benefits to customers. Say goodbye to downtime and hello to seamless operations with this high-quality TRIAC in your arsenal.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the TRIAC, ensuring long-term durability and reliability.

Maximum DC Gate Trigger Current: 25 mA

This high gate trigger current allows for reliable and efficient control of the TRIAC, making it suitable for a variety of applications.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making the TRIAC easy to integrate into different systems.

Maximum Leakage Current: 2 mA

Low leakage current helps in reducing power loss and ensures that the TRIAC operates efficiently without wasting energy.

No. of Terminals: 3

Having three terminals provides flexibility in connecting the TRIAC to external components, allowing for versatile usage in different circuits.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this TRIAC can withstand elevated temperatures without compromising its performance, making it suitable for industrial applications.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

This type of trigger device allows for precise control over the switching of the TRIAC, making it ideal for applications that require accurate and fast switching.

Repetitive Peak Off-state Voltage: 400 V

The high off-state voltage rating ensures that the TRIAC can handle high voltage applications, making it a reliable choice for a wide range of electrical systems.

Technical Specifications

Triode For Alternating Current (TRIAC) T2800D attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Commutation Voltage:

4 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

75 V/us

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

30 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

T2800D Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-00-261-7566, 5961002617566

NIIN

002617566

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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