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2N6075B

Onsemi

2N6075B by Onsemi

2N6075B by Onsemi is a TRIAC with 600V repetitive peak off-state voltage, 4A max RMS on-state current, and 15mA max DC gate trigger current. Ideal for applications requiring isolated case connection, it operates b/w -40 °C to 110°C and features a single configuration with through-hole terminals.

Median Price

$0.370

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 500 parts In-Stock

1+ parts

-

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$0.370

1k+ parts

$0.307

10k+ parts

$0.274

500

-

$0.370

$0.307

$0.274

Distributors (In-Stock)

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Digiode

USA . 1,770 parts In-Stock

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$0.288

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1,770

$0.288

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Vyrian

USA . 8,558 parts In-Stock

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8,558

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Fibra_Brandt Electronic GMBH

Germany . 797 parts In-Stock

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Bristol Electronics

USA . 86 parts In-Stock

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$0.366

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86

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$0.366

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ZD Integrated Circuits Inc.

USA . 31 parts In-Stock

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Q Components

USA . 27 parts In-Stock

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GSS - Global Semi Support

USA . 14 parts In-Stock

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LittleDiode

UK . 11 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 10 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 263 parts In-Stock

1+ parts

$0.258

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263

$0.258

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Corphita

USA . 1,593 parts In-Stock

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$0.273

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$0.273

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Corohmni

South Africa . 219 parts In-Stock

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$0.303

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$0.303

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Kepictronics

USA . 13,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 12,548 parts In-Stock

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TANS Electronics

Latvia . 7,570 parts In-Stock

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West Coast Incorporated

USA . 7,388 parts In-Stock

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SupplyDigital Components

Austria . 7,056 parts In-Stock

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Northwest PG Solutions

USA . 2,963 parts In-Stock

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Problanco Electronics

Mexico . 2,829 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Native Components

USA . 1,328 parts In-Stock

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$2.634

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UHIMA Technologies

Türkiye . 744 parts In-Stock

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Kulean Microsystems

USA . 436 parts In-Stock

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Assy Fe

Spain . 2 parts In-Stock

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Overview

Upgrade your electronic devices with the high-quality 2N6075B by Onsemi. This TRIAC offers reliable performance and durability, thanks to its manufacturer's reputation for excellence. Ideal for a variety of applications, this product provides customers with value, efficiency, and peace of mind. Don't settle for anything less than the best when it comes to your electronics - choose the 2N6075B for superior performance every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection for the internal components, making this product long-lasting and reliable.

Maximum DC Gate Trigger Current: 15 mA

With a high maximum DC gate trigger current, this TRIAC is capable of reliably switching high currents, making it suitable for a wide range of applications.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making it easy to use in various projects.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and integration into electronic circuit designs.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides a secure and stable connection, ensuring reliable performance under various operating conditions.

Maximum Leakage Current: 2 mA

The low maximum leakage current helps to minimize power loss and improve efficiency in the device.

No. of Terminals: 3

Having 3 terminals allows for easy connection and control of the TRIAC in a circuit setup.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers secure mounting and heat dissipation, enhancing the overall performance of the device.

Maximum Operating Temperature: 110 °C

The high maximum operating temperature range enables the TRIAC to operate effectively in various environments without overheating.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

The 4 quadrant logic level TRIAC design provides versatile and precise control over the switching operation, making it suitable for a variety of applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the TRIAC to function reliably in cold environments without any performance issues.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures excellent conductivity and solderability, facilitating easy installation and maintenance.

Terminal Position: SINGLE

The single terminal position simplifies the connection process and enhances the overall usability of the device.

Maximum RMS On-state Current: 4 A

The high maximum RMS on-state current rating allows the TRIAC to handle heavy loads with ease, making it suitable for high-power applications.

Maximum DC Gate Trigger Voltage: 2.5 V

The low maximum DC gate trigger voltage ensures efficient and reliable triggering of the TRIAC, enhancing the overall performance of the device.

Case Connection: ISOLATED

The isolated case connection enhances safety and reliability by preventing electrical interference and cross-talk between components.

Repetitive Peak Off-state Voltage: 600 V

The high repetitive peak off-state voltage rating ensures that the TRIAC can withstand high voltage spikes and surges, making it suitable for industrial and commercial applications.

Maximum Holding Current: 30 mA

The high maximum holding current ensures stable operation and prevents false triggering, improving the overall reliability of the device.

Peak Reflow Temperature °C: 235

The high peak reflow temperature rating allows for easy soldering and rework processes, ensuring a reliable and robust connection in the device.

Technical Specifications

Triode For Alternating Current (TRIAC) 2N6075B attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Additional Features:

CMOS COMPATIBLE

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

30 mA

JEDEC-95 Code:

TO-225

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

2N6075B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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