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DTA05B

Onsemi

DTA05B by Onsemi

DTA05B by Onsemi is a TRIAC with max on-state voltage of 2V, DC gate trigger current of 15mA, and leakage current of 0.1mA. It operates b/w -25 °C to 110°C, suitable for AC applications requiring max RMS on-state current of 0.5A.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,010 parts In-Stock

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Digiode

USA . 1,402 parts In-Stock

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Native Components

USA . 726 parts In-Stock

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$192.781

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$185.070

726

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$185.070

Northwest PG Solutions

USA . 1,678 parts In-Stock

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$212.059

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Kulean Microsystems

USA . 7,593 parts In-Stock

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SupplyDigital Components

Austria . 6,705 parts In-Stock

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TANS Electronics

Latvia . 5,157 parts In-Stock

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Problanco Electronics

Mexico . 4,906 parts In-Stock

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Corphita

USA . 921 parts In-Stock

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Corohmni

South Africa . 358 parts In-Stock

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UHIMA Technologies

Türkiye . 257 parts In-Stock

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Overview

Discover the superior quality of the DTA05B TRIAC by Onsemi, a reliable and efficient component for various applications. Manufactured by Onsemi, a trusted name in the industry, this TRIAC offers unmatched performance and durability. Ideal for controlling AC power in appliances, lighting, and motor control systems, the DTA05B provides customers with exceptional value, precise functionality, and peace of mind. Upgrade your projects with the DTA05B and experience the benefits of using top-notch components from a leading manufacturer like Onsemi.

Feature Benefit Bullets

Maximum On-state Voltage: 2 V

Low on-state voltage allows for efficient conduction and minimal power loss.

Maximum DC Gate Trigger Current: 15 mA

Low gate trigger current helps in precise control of the device and reduces power consumption.

Maximum Leakage Current: 0.1 mA

Low leakage current ensures minimal power loss when device is in off-state.

Maximum Operating Temperature: 110 °C

Wide temperature range allows for reliable operation in varying environmental conditions.

Trigger Device Type: TRIAC

TRIAC type trigger device offers bidirectional control of current flow, making it suitable for AC applications.

Minimum Operating Temperature: -25 °C

Device can operate in low temperature conditions without performance degradation.

Maximum RMS On-state Current: 0.5 A

High current handling capacity ensures the device can handle heavy loads with ease.

Maximum DC Gate Trigger Voltage: 2.3 V

Low gate trigger voltage ensures efficient switching of the device.

Repetitive Peak Off-state Voltage: 100 V

High off-state voltage capacity makes the device suitable for handling high voltage applications.

Maximum Holding Current: 25 mA

High holding current ensures the device remains in on-state even under fluctuating load conditions.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA05B attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

2.3 V

Maximum Holding Current:

25 mA

Maximum Leakage Current:

.1 mA

Maximum On-state Voltage:

2 V

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-25 Cel

Maximum RMS On-state Current:

.5 A

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA05B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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