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MAC997B6RL1

Onsemi

MAC997B6RL1 by Onsemi

MAC997B6RL1 by Onsemi is a TRIAC with 3 terminals, max. DC gate trigger current of 5mA, and max. RMS on-state current of 0.8A. Ideal for applications requiring a 4 quadrant logic level TRIAC, it operates b/w -40 °C to 110°C and has a repetitive peak off-state voltage of 400V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,441 parts In-Stock

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Vyrian

USA . 463 parts In-Stock

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Problanco Electronics

Mexico . 8,238 parts In-Stock

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SupplyDigital Components

Austria . 8,225 parts In-Stock

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Kulean Microsystems

USA . 5,258 parts In-Stock

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TANS Electronics

Latvia . 3,829 parts In-Stock

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Corohmni

South Africa . 469 parts In-Stock

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469

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Corphita

USA . 415 parts In-Stock

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UHIMA Technologies

Türkiye . 212 parts In-Stock

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Overview

Enhance your electronic projects with the reliable performance of the MAC997B6RL1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and cutting-edge technology in their products. This TRIAC is perfect for a wide range of applications, offering precise control and efficiency. With a maximum RMS on-state current of 0.8 A and a repetitive peak off-state voltage of 400 V, this product provides exceptional value and benefits to customers looking for high-quality components. Upgrade your projects with the MAC997B6RL1 and experience the advantages of working with top-tier electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy package body material ensures durability and resistance to external factors, making this product long-lasting and reliable.

Maximum DC Gate Trigger Current: 5 mA

With a high maximum DC gate trigger current, this product offers efficient performance and reliable switching capabilities.

Configuration: SINGLE

The single configuration simplifies installation and operation of the product, making it user-friendly and easy to integrate into various systems.

Package Shape: ROUND

The round package shape allows for easy mounting and reduces the risk of damage during installation, ensuring a secure and stable connection.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides a strong and reliable connection, making this product suitable for high-stress environments and heavy-duty applications.

Maximum Leakage Current: 0.01 mA

The low maximum leakage current ensures energy efficiency and reduces the risk of overheating, making this product cost-effective and environmentally friendly.

No. of Terminals: 3

Having 3 terminals allows for versatile connections and compatibility with various systems, providing flexibility and ease of use.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers compactness and space-saving design, making this product suitable for applications where space is limited.

Maximum Operating Temperature: 110 °C

With a high maximum operating temperature, this product can withstand extreme conditions and maintain reliable performance in harsh environments.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

The 4 quadrant logic level TRIAC trigger device type ensures precise control and smooth operation, making this product ideal for applications that require accurate switching.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows this product to function in cold environments, ensuring consistent performance in a wide range of conditions.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good conductivity and corrosion resistance, increasing the longevity and reliability of this product.

Terminal Position: BOTTOM

Having the terminal position at the bottom allows for easy and secure connections, preventing accidental disconnection and ensuring stable operation.

Maximum RMS On-state Current: 0.8 A

The high maximum RMS on-state current ensures efficient power handling and reliable performance, making this product suitable for high-power applications.

Maximum DC Gate Trigger Voltage: 2 V

With a low maximum DC gate trigger voltage, this product offers energy efficiency and precise control over the switching process, reducing power consumption.

Repetitive Peak Off-state Voltage: 400 V

The high repetitive peak off-state voltage allows this product to handle high voltages safely, making it suitable for applications with voltage fluctuations.

Minimum Critical Rate of Rise of Off-state Voltage: 20 V/us

Having a minimum critical rate of rise of off-state voltage of 20 V/us ensures stable operation and protection against voltage spikes, enhancing the reliability of this product.

Maximum Holding Current: 10 mA

With a high maximum holding current, this product maintains the on-state conduction even after the trigger current is removed, ensuring continuous operation and reliability.

Peak Reflow Temperature °C: 235

The high peak reflow temperature of 235 °C allows for reliable soldering and ensures the product's durability during the manufacturing process.

Technical Specifications

Triode For Alternating Current (TRIAC) MAC997B6RL1 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

20 V/us

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

10 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

Maximum Leakage Current:

.01 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

MAC997B6RL1 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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