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MAC97A6RLRF

Onsemi

MAC97A6RLRF by Onsemi

MAC97A6RLRF by Onsemi is a TRIAC with 400V repetitive peak off-state voltage and 0.6A max RMS on-state current. It operates b/w -40 °C to 110°C, suitable for various AC power control applications. Featuring a single configuration, it has a 5mA max DC gate trigger current ideal for 4 quadrant logic level TRIAC triggering.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,471 parts In-Stock

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2,471

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Vyrian

USA . 908 parts In-Stock

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908

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QUARKTWIN TECHNOLOGY LTD

USA . 22,448 parts In-Stock

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22,448

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TANS Electronics

Latvia . 7,620 parts In-Stock

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SupplyDigital Components

Austria . 7,168 parts In-Stock

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Problanco Electronics

Mexico . 5,333 parts In-Stock

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5,333

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Kulean Microsystems

USA . 2,174 parts In-Stock

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2,174

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UHIMA Technologies

Türkiye . 781 parts In-Stock

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781

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Corphita

USA . 430 parts In-Stock

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430

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Corohmni

South Africa . 376 parts In-Stock

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376

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Overview

Discover the reliable and high-quality MAC97A6RLRF by Onsemi, a top-tier manufacturer in the field of Triodes for Alternating Current (TRIAC). This versatile product offers exceptional value with its easy-to-use configuration and robust performance. Ideal for a wide range of applications, this TRIAC is perfect for controlling AC power in lighting, heating, and motor control systems. Experience the benefits of this innovative technology with its impressive features and seamless operation, making it a top choice for professionals looking for efficiency and reliability in their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the internal components of the TRIAC, ensuring reliability and safety.

Maximum DC Gate Trigger Current: 5 mA

Low trigger current requirement allows for efficient control of the TRIAC, making it suitable for a wide range of applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and integration of the TRIAC into different systems.

Package Shape: ROUND

Round package shape provides ease of mounting and installation in various setups.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure secure connections and facilitate easy soldering during assembly.

No. of Terminals: 3

3 terminals provide necessary connections for gate triggering and switching functions of the TRIAC.

Package Style: CYLINDRICAL

Cylindrical package style offers compact size and efficient heat dissipation for optimal performance.

Maximum Operating Temperature: 110 °C

High maximum operating temperature allows for reliable performance in various operating conditions.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

4 quadrant logic level TRIAC enables precise control and switching capabilities for different load requirements.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures the TRIAC can operate in cold environments without any issues.

Terminal Finish: TIN SILVER COPPER

TIN SILVER COPPER terminal finish provides good conductivity and resistance to corrosion, ensuring long-term reliability.

Terminal Position: BOTTOM

Bottom terminal position allows for easy access and connection to external circuits.

Maximum RMS On-state Current: 0.6 A

High maximum RMS on-state current rating makes the TRIAC suitable for handling moderate to high power loads.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage requirement enables efficient control and operation of the TRIAC.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage rating ensures the TRIAC can handle voltage transients and surges effectively.

Maximum Holding Current: 10 mA

High holding current capability ensures the TRIAC remains latched in the on-state condition under specified conditions.

Technical Specifications

Triode For Alternating Current (TRIAC) MAC97A6RLRF attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Configuration:

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

10 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

.6 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

MAC97A6RLRF Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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