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BTA12-800C4G

Onsemi

BTA12-800C4G by Onsemi

BTA12-800C4G by Onsemi is a 4 QUADRANT LOGIC LEVEL TRIAC with 800V Repetitive Peak Off-state Voltage and 12A Max RMS On-state Current. It has a Max DC Gate Trigger Current of 25mA, making it suitable for applications requiring precise AC power control in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,103 parts In-Stock

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Digiode

USA . 1,779 parts In-Stock

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1,779

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Distributors (Availability)

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$2.558

100+ parts

$2.328

1k+ parts

$2.098

10k+ parts

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500

$2.558

$2.328

$2.098

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TANS Electronics

Latvia . 4,563 parts In-Stock

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4,563

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Problanco Electronics

Mexico . 3,575 parts In-Stock

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Corphita

USA . 2,438 parts In-Stock

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2,438

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SupplyDigital Components

Austria . 1,680 parts In-Stock

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1,680

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Kulean Microsystems

USA . 1,163 parts In-Stock

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Native Components

USA . 908 parts In-Stock

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908

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UHIMA Technologies

Türkiye . 899 parts In-Stock

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899

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Corohmni

South Africa . 349 parts In-Stock

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349

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Northwest PG Solutions

USA . 95 parts In-Stock

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95

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Overview

Discover the power of the BTA12-800C4G by Onsemi - a top-quality TRIAC that offers reliable performance and versatility for a range of applications. With Onsemi's reputation for excellence, you can trust that this product is built to last. Whether you're looking to control AC power in lighting systems, motor speed controllers, or heating elements, this TRIAC delivers unmatched value and benefits. Say goodbye to worries about leakage current and operating temperature limits - the BTA12-800C4G has got you covered. Upgrade your projects with the best in the business and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for various applications.

Maximum DC Gate Trigger Current: 25 mA

The high maximum DC gate trigger current ensures reliable and efficient operation of the TRIAC.

Configuration: SINGLE

The single configuration simplifies the wiring and setup of the TRIAC, making it user-friendly.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and fitting in different electronic devices or systems.

Maximum Leakage Current: 2 mA

The low maximum leakage current helps in minimizing power loss and improving the overall efficiency of the device.

No. of Terminals: 3

Having 3 terminals provides flexibility in connecting the TRIAC to various circuits, enabling versatile usage.

Maximum RMS On-state Current: 12 A

The high maximum RMS on-state current capability allows the TRIAC to handle large currents without any issues.

Repetitive Peak Off-state Voltage: 800 V

The high repetitive peak off-state voltage rating ensures the TRIAC can withstand high voltage levels, suitable for a wide range of applications.

Technical Specifications

Triode For Alternating Current (TRIAC) BTA12-800C4G attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

100 V/us

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

25 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Reference Standard:

UL RECOGNIZED

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

BTA12-800C4G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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