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TIC201E

Texas Instruments

TIC201E by Texas Instruments

TIC201E by Texas Instruments is a TRIAC with max. DC gate trigger current of 25mA, max. leakage current of 1mA, and max. operating temp of 110°C. Ideal for applications requiring a trigger device with a max. RMS on-state current of 2.5A and repetitive peak off-state voltage of 500V in environments ranging from -40°C to 110°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 3,030 parts In-Stock

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Vyrian

USA . 2,722 parts In-Stock

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Parana Technologies

USA . 1,511 parts In-Stock

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$2.681

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$3.165

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1,511

$2.681

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$3.165

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DigiPath Technology Company

USA . 901 parts In-Stock

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$2.952

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$2.716

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901

$2.952

$2.716

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ChromeModa Solutions

Germany . 3,601 parts In-Stock

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$3.012

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$2.470

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$3.012

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IDEA Electronic Components Group

UK . 515 parts In-Stock

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$3.012

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$2.711

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515

$3.012

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AZTECH Wire

Italy . 540 parts In-Stock

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$5.315

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540

$5.315

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One Stop Electronics

USA . 1,435 parts In-Stock

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$6.100

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$6.100

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Ampacity Inc.

Singapore . 622 parts In-Stock

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$7.100

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$7.100

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Semicontronic

India . 434 parts In-Stock

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$9.100

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$8.872

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$8.827

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434

$9.100

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$8.827

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Corphita

USA . 788 parts In-Stock

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Corohmni

South Africa . 278 parts In-Stock

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Overview

Upgrade your electronic projects with the high-quality TIC201E Triode for Alternating Current (TRIAC) by Texas Instruments. This versatile trigger device offers reliable performance, with a maximum RMS On-state current of 2.5 A and a Repetitive Peak Off-state Voltage of 500 V. From lighting control to motor speed regulation, the TIC201E is perfect for a wide range of applications. Trust in Texas Instruments' reputation for excellence and choose the TIC201E for superior quality and performance in your next project.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 25 mA

A higher trigger current ensures reliable and consistent activation of the TRIAC, making it suitable for a wide range of applications.

Maximum Leakage Current: 1 mA

Low leakage current helps in maintaining efficiency and reducing unnecessary power consumption during OFF state.

Maximum Operating Temperature: 110 °C

With a high operating temperature range, this TRIAC can withstand harsh environments without compromising performance.

Trigger Device Type: TRIAC

Being a TRIAC, this device is suitable for bidirectional control of AC power, making it versatile in various switching applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows for reliable operation even in cold climates or industrial settings with extreme temperatures.

Maximum RMS On-state Current: 2.5 A

The high on-state current rating enables this TRIAC to handle moderate to high power loads, making it suitable for diverse applications.

Maximum DC Gate Trigger Voltage: 2.5 V

Low gate trigger voltage ensures efficient triggering of the device while consuming minimal control power.

Repetitive Peak Off-state Voltage: 500 V

The high off-state voltage rating allows this TRIAC to safely switch higher voltage loads without risk of breakdown or failure.

Minimum Critical Rate of Rise of Commutation Voltage: 2 V/us

A fast rate of rise of commutation voltage ensures reliable switching and minimizes the risk of false triggering or device damage.

Minimum Critical Rate of Rise of Off-state Voltage: 50 V/us

Fast rate of rise of off-state voltage helps in reducing electromagnetic interference and ensures stable operation of the device.

Maximum Holding Current: 30 mA

The holding current is within a reasonable range, providing sufficient margin for reliable holding of the on-state conduction without false turn-off.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC201E attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

2 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

30 mA

Maximum Leakage Current:

1 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

2.5 A

Repetitive Peak Off-state Voltage:

500 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC201E Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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