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MAC4DSN-001G

Onsemi

MAC4DSN-001G by Onsemi

MAC4DSN-001G by Onsemi is a TRIAC with 3 terminals, max. RMS on-state current of 4A, and repetitive peak off-state voltage of 800V. It operates b/w -40 to 125 °C and has a max. DC gate trigger current of 10mA. Ideal for AC power control applications due to its high performance and reliability.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,365 parts In-Stock

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Digiode

USA . 1,031 parts In-Stock

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Kulean Microsystems

USA . 4,586 parts In-Stock

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TANS Electronics

Latvia . 3,744 parts In-Stock

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SupplyDigital Components

Austria . 3,504 parts In-Stock

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Problanco Electronics

Mexico . 2,681 parts In-Stock

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Corphita

USA . 1,219 parts In-Stock

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UHIMA Technologies

Türkiye . 898 parts In-Stock

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Corohmni

South Africa . 147 parts In-Stock

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Overview

Discover the power of the MAC4DSN-001G by Onsemi, a top-quality TRIAC that offers unrivaled performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is perfect for a wide range of applications. From lighting controls to motor speed control, the MAC4DSN-001G delivers exceptional value and benefits to our customers. With a maximum RMS on-state current of 4A and a repetitive peak off-state voltage of 800V, this TRIAC ensures smooth and efficient operation. Upgrade your projects with the MAC4DSN-001G and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and durability, making the product suitable for a wide range of applications.

Maximum DC Gate Trigger Current: 10 mA

Allows for efficient triggering of the TRIAC, ensuring reliable performance.

Configuration: SINGLE

Simplified design and installation due to single configuration.

Package Shape: RECTANGULAR

Easy to mount and integrate into different electronic circuits.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering onto circuit boards for secure connections.

Maximum Leakage Current: 0.01 mA

Ensures minimal power loss and efficient operation.

No. of Terminals: 3

Provides necessary connections for the operation of the TRIAC.

Package Style (Meter): IN-LINE

Compact design ideal for space-constrained applications.

Maximum Operating Temperature: 125 °C

Can operate at high temperatures without performance degradation.

Trigger Device Type: TRIAC

Specifically designed for Alternating Current applications.

Minimum Operating Temperature: -40 °C

Suitable for use in cold environments without compromising performance.

Terminal Finish: MATTE TIN

Corrosion-resistant finish for long-term reliability.

Terminal Position: SINGLE

Simplified connections for easy installation.

Maximum RMS On-state Current: 4 A

Capable of handling moderate current loads with ease.

Maximum DC Gate Trigger Voltage: 1.3 V

Low trigger voltage for efficient operation and control.

Case Connection: MAIN TERMINAL 2

Clearly labeled connection points for easy installation.

Repetitive Peak Off-state Voltage: 800 V

Suitable for high voltage applications, ensuring safety and reliability.

Minimum Critical Rate of Rise of Off-state Voltage: 50 V/us

Provides fast response times for better protection against voltage spikes.

Maximum Holding Current: 15 mA

Ensures the TRIAC remains in the on-state to maintain load current.

Technical Specifications

Triode For Alternating Current (TRIAC) MAC4DSN-001G attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

10 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

15 mA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Maximum Leakage Current:

.01 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

MAC4DSN-001G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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