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MAC212A8D

Onsemi

MAC212A8D by Onsemi

MAC212A8D by Onsemi is a TRIAC with 600V repetitive peak off-state voltage, 12A max RMS on-state current, and 50mA max DC gate trigger current. It is ideal for applications requiring precise AC power control such as dimmers, motor speed controllers, and heating control systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,454 parts In-Stock

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Vyrian

USA . 1,110 parts In-Stock

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1,110

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Distributors (Availability)

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SupplyDigital Components

Austria . 6,422 parts In-Stock

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6,422

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Problanco Electronics

Mexico . 6,333 parts In-Stock

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6,333

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TANS Electronics

Latvia . 5,381 parts In-Stock

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Kulean Microsystems

USA . 1,482 parts In-Stock

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UHIMA Technologies

Türkiye . 432 parts In-Stock

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Corohmni

South Africa . 276 parts In-Stock

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Corphita

USA . 267 parts In-Stock

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Overview

Unleash the power of innovation with the MAC212A8D by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality products like this TRIAC, designed for a variety of applications. With a maximum RMS on-state current of 12A and a repetitive peak off-state voltage of 600V, this product offers unparalleled performance and reliability. Whether you're looking to enhance lighting systems or control motor speed, the MAC212A8D provides the value, benefits, and advantages you need to take your projects to the next level. Experience the difference with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, making the product durable and reliable.

Maximum DC Gate Trigger Current: 50 mA

Allows for precise and efficient triggering of the TRIAC, ensuring stable operation.

Configuration: SINGLE

Simplifies installation and integration into existing systems.

Package Shape: RECTANGULAR

Facilitates easy mounting and space-saving design.

Terminal Form: THROUGH-HOLE

Enables secure and stable connection to other components on the circuit board.

Maximum Leakage Current: 2 mA

Ensures low power consumption and minimizes heat generation.

No. of Terminals: 3

Simplifies the wiring process and enhances overall system efficiency.

Package Style (Meter): FLANGE MOUNT

Provides easy installation and robust mechanical support.

Maximum Operating Temperature: 125 °C

Suitable for a wide range of operating environments, ensuring reliable performance.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

Allows for precise and accurate triggering, enhancing control and stability.

Minimum Operating Temperature: -40 °C

Ensures operation in extreme temperature conditions, making the product versatile.

Terminal Finish: TIN LEAD

Provides good conductivity and corrosion resistance, ensuring long-term performance.

Terminal Position: SINGLE

Facilitates easy installation and connection in the circuit.

Maximum RMS On-state Current: 12 A

Allows for handling of high current loads, making it suitable for various applications.

Maximum DC Gate Trigger Voltage: 2 V

Enables efficient triggering with low input voltage, improving energy efficiency.

Case Connection: MAIN TERMINAL 2

Provides convenient and easy connection to the main circuit.

Repetitive Peak Off-state Voltage: 600 V

Ensures safe operation and protection against voltage surges.

Maximum Holding Current: 50 mA

Maintains stable operation even after triggering, ensuring reliable performance.

Technical Specifications

Triode For Alternating Current (TRIAC) MAC212A8D attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

50 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

MAC212A8D Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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