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MAC212A8DG

Onsemi

MAC212A8DG by Onsemi

MAC212A8DG by Onsemi is a TRIAC with 600V repetitive peak off-state voltage and 12A max RMS on-state current. It operates b/w -40 to 125 °C, with a 2V max DC gate trigger voltage. Ideal for applications requiring precise AC power control in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 590 parts In-Stock

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Vyrian

USA . 443 parts In-Stock

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TANS Electronics

Latvia . 7,142 parts In-Stock

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Kulean Microsystems

USA . 6,823 parts In-Stock

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Problanco Electronics

Mexico . 5,367 parts In-Stock

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Corphita

USA . 1,786 parts In-Stock

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UHIMA Technologies

Türkiye . 423 parts In-Stock

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Corohmni

South Africa . 398 parts In-Stock

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SupplyDigital Components

Austria . 168 parts In-Stock

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Overview

Experience superior performance and reliability with the MAC212A8DG by Onsemi. As a leading manufacturer in the industry, Onsemi's Triode For Alternating Current (TRIAC) offers exceptional quality and precision. This product is ideal for a wide range of applications, providing customers with unmatched value and benefits. With its advanced features and high-quality construction, the MAC212A8DG delivers unparalleled performance, making it the top choice for all your electronic needs. Trust Onsemi to provide you with the best in class products that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides excellent protection to the internal components, ensuring durability and reliability.

Maximum DC Gate Trigger Current: 50 mA

The high maximum DC gate trigger current allows for efficient and reliable triggering of the TRIAC, enhancing performance.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making it easier to integrate into various applications.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact form factor, which is ideal for space-constrained applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form offers secure and reliable connections, ensuring stable operation under different conditions.

Maximum Leakage Current: 2 mA

The low maximum leakage current helps in reducing power consumption and ensures minimal energy wastage.

No. of Terminals: 3

Having 3 terminals allows for easy and versatile connections, enabling flexibility in circuit design.

Package Style (Meter): FLANGE MOUNT

The flange mount package style facilitates easy mounting onto surfaces, providing convenience in installation.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures reliable operation even in demanding environments with elevated temperatures.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

The 4 quadrant logic level TRIAC allows for precise control and reliable performance in a wide range of applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures the TRIAC can function efficiently even in cold conditions, making it versatile in different environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides a reliable contact surface, ensuring good conductivity and long-term performance.

Terminal Position: SINGLE

The single terminal position simplifies the wiring process, making it easier to connect the TRIAC in circuits.

Maximum RMS On-state Current: 12 A

The high maximum RMS on-state current capability allows the TRIAC to handle high current loads effectively, making it suitable for various applications.

Maximum DC Gate Trigger Voltage: 2 V

The low maximum DC gate trigger voltage helps in achieving efficient triggering with minimal input voltage, improving energy efficiency.

Case Connection: MAIN TERMINAL 2

The case connection at main terminal 2 facilitates easy integration into circuits, ensuring proper connectivity for seamless operation.

Repetitive Peak Off-state Voltage: 600 V

The high repetitive peak off-state voltage rating provides protection against voltage spikes and surges, enhancing the reliability of the TRIAC.

Maximum Holding Current: 50 mA

The high maximum holding current ensures stable operation and prevents unintentional turn-off, contributing to the overall reliability of the device.

Technical Specifications

Triode For Alternating Current (TRIAC) MAC212A8DG attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

50 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

MAC212A8DG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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