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MAC212A10

Onsemi

MAC212A10 by Onsemi

MAC212A10 by Onsemi is a single TRIAC with 12A RMS on-state current, 800V repetitive peak off-state voltage, and 50mA max DC gate trigger current. It is ideal for applications requiring 4-quadrant logic level TRIACs in a flange mount package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,466 parts In-Stock

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Digiode

USA . 391 parts In-Stock

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391

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$5.619

100+ parts

$5.113

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$4.608

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500

$5.619

$5.113

$4.608

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 27,671 parts In-Stock

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SupplyDigital Components

Austria . 5,741 parts In-Stock

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TANS Electronics

Latvia . 4,614 parts In-Stock

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Kulean Microsystems

USA . 4,380 parts In-Stock

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Problanco Electronics

Mexico . 2,729 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,650 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,100 parts In-Stock

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UHIMA Technologies

Türkiye . 859 parts In-Stock

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Corohmni

South Africa . 473 parts In-Stock

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Corphita

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Overview

Discover the power and precision of the MAC212A10 by Onsemi, a top-quality TRIAC that delivers exceptional performance in a variety of applications. With a focus on reliability and efficiency, Onsemi has crafted a product that exceeds expectations. From lighting control to motor speed regulation, this TRIAC offers versatility and durability. Experience seamless operation and peace of mind knowing you're investing in a product that is built to last. Elevate your projects with the MAC212A10 - where quality meets value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the internal components of the TRIAC, ensuring a longer lifespan and reliable performance.

Maximum DC Gate Trigger Current: 50 mA

The high maximum DC gate trigger current allows for reliable and fast switching of the TRIAC, making it suitable for a variety of alternating current applications.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making this TRIAC an easy-to-use and efficient choice for alternating current control.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into circuit designs and provides a compact form factor, making it ideal for space-constrained applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form simplifies the installation process, ensuring secure connections and facilitating soldering during assembly.

Maximum Leakage Current: 2 mA

The low maximum leakage current minimizes energy loss and improves the efficiency of the TRIAC, making it a cost-effective choice for alternating current control.

No. of Terminals: 3

The three terminals provide flexibility and compatibility with various circuit configurations, enhancing the versatility and usability of this TRIAC.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy mounting and secure placement of the TRIAC, making it suitable for industrial and commercial applications requiring reliable performance.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature range ensures reliable performance in a variety of environmental conditions, making this TRIAC an ideal choice for demanding applications.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

The 4 quadrant logic level TRIAC design provides precise control over alternating current, enabling smooth and accurate switching in a wide range of applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature range allows for reliable performance in cold environments, making this TRIAC suitable for a wide range of operating conditions.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures secure connections and reliable performance over time, making this TRIAC a durable and long-lasting choice for alternating current control.

Terminal Position: SINGLE

The single terminal position simplifies installation and integration into circuit designs, making this TRIAC an easy-to-use and versatile choice for alternating current applications.

Maximum RMS On-state Current: 12 A

The high maximum RMS on-state current rating allows for efficient power handling and control, making this TRIAC suitable for high-power alternating current applications.

Maximum DC Gate Trigger Voltage: 2 V

The low maximum DC gate trigger voltage ensures efficient and reliable switching of the TRIAC, making it suitable for low-voltage alternating current control applications.

Case Connection: MAIN TERMINAL 2

The main terminal 2 case connection provides a secure and stable connection for the TRIAC, ensuring reliable performance and safe operation in a variety of applications.

Repetitive Peak Off-state Voltage: 800 V

The high repetitive peak off-state voltage rating allows for reliable and robust performance in high-voltage alternating current applications, making this TRIAC a versatile choice for a wide range of scenarios.

Minimum Critical Rate of Rise of Off-state Voltage: 100 V/us

The minimum critical rate of rise of off-state voltage ensures fast and efficient response to voltage fluctuations, making this TRIAC suitable for dynamic alternating current control applications.

Maximum Holding Current: 50 mA

The high maximum holding current rating ensures stable and reliable operation of the TRIAC, making it suitable for continuous alternating current control applications.

Peak Reflow Temperature °C: 235

The high peak reflow temperature allows for efficient soldering and assembly of the TRIAC, ensuring secure connections and reliable performance in a variety of applications.

Technical Specifications

Triode For Alternating Current (TRIAC) MAC212A10 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

100 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

50 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

MAC212A10 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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