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DTA3G

Onsemi

DTA3G by Onsemi

DTA3G by Onsemi is a TRIAC with 600V repetitive peak off-state voltage, 3A max RMS on-state current, and 15mA max DC gate trigger current. It operates b/w -30 °C to 100°C and is ideal for AC power control applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,484 parts In-Stock

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Digiode

USA . 1,432 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 974 parts In-Stock

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$1.158

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974

$1.158

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Northwest PG Solutions

USA . 367 parts In-Stock

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$1.273

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367

$1.273

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SupplyDigital Components

Austria . 6,744 parts In-Stock

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Kulean Microsystems

USA . 6,571 parts In-Stock

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Problanco Electronics

Mexico . 5,687 parts In-Stock

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TANS Electronics

Latvia . 1,956 parts In-Stock

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UHIMA Technologies

Türkiye . 535 parts In-Stock

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Corohmni

South Africa . 490 parts In-Stock

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Corphita

USA . 369 parts In-Stock

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369

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Overview

Enhance the performance of your electronic devices with the DTA3G by Onsemi, a top-quality TRIAC designed to meet all your alternating current needs. With a maximum on-state voltage of 1.8V and a maximum RMS on-state current of 3A, this versatile component ensures smooth operation and reliability. From lighting control to motor speed regulation, the DTA3G offers unmatched efficiency and precision in various applications. Trust in Onsemi's reputation for excellence and elevate your projects with the superior performance of the DTA3G.

Feature Benefit Bullets

Maximum On-state Voltage: 1.8 V

Low voltage drop ensures efficient operation and minimal power loss.

Maximum DC Gate Trigger Current: 15 mA

Allows for precise and reliable triggering of the TRIAC.

Maximum Leakage Current: 1 mA

Low leakage current helps in conserving energy and preventing overheating.

Maximum Operating Temperature: 100 °C

Wide operating temperature range enables the TRIAC to be used in various environments.

Trigger Device Type: TRIAC

The TRIAC design provides bidirectional control of current flow, making it suitable for AC applications.

Minimum Operating Temperature: -30 °C

Can operate in colder temperatures without any issues, making it versatile for different climates.

Maximum RMS On-state Current: 3 A

Capable of handling high current loads, making it suitable for a wide range of applications.

Maximum DC Gate Trigger Voltage: 2 V

Low trigger voltage ensures efficient triggering and control of the TRIAC.

Repetitive Peak Off-state Voltage: 600 V

Can handle high voltage levels, making it versatile for various power applications.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA3G attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Leakage Current:

1 mA

Maximum On-state Voltage:

1.8 V

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-30 Cel

Maximum RMS On-state Current:

3 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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