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TIC226D

Texas Instruments

TIC226D by Texas Instruments

TIC226D by Texas Instruments is a single TRIAC with 3 terminals, max. RMS on-state current of 8A, and trigger voltage of 2.5V. Ideal for applications requiring a 4-quadrant logic level TRIAC, it operates b/w -40 to 110°C with a max. off-state voltage of 400V.

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20

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1k+

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Vyrian

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Digiode

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Halfin

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LIBRA Elektronik GmbH

Germany . 850 parts In-Stock

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850

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ACDS - Activité Composants Distribution Service

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Bristol Electronics

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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ECAB

Sweden . 100 parts In-Stock

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Manotoh

Italy . 88 parts In-Stock

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Digital Electronic Gebert Verwaltungs UG

Germany . 60 parts In-Stock

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Whistler Technology

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Huijzer Components

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Nova Conductors

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LittleDiode

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Semi Source

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Corel Iberica Componentes, S.L.

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ABC Electronics Ltd.

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Fibra_Brandt Electronic GMBH

Germany . 7 parts In-Stock

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Donberg Electronics Ltd

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Parana Technologies

USA . 37 parts In-Stock

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$1.804

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$2.361

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DigiPath Technology Company

USA . 202 parts In-Stock

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$1.986

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ChromeModa Solutions

Germany . 6,177 parts In-Stock

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IDEA Electronic Components Group

UK . 1,578 parts In-Stock

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One Stop Electronics

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AZTECH Wire

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Component Stockers USA

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Metaverse IC Inc.

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Assy Fe

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Overview

Enhance your electronic projects with the TIC226D by Texas Instruments, a top-quality TRIAC that offers unmatched performance and reliability. Manufactured by industry leader Texas Instruments, this TRIAC is perfect for a wide range of applications, delivering superior control over AC power. With a maximum RMS On-state current of 8A and a Repetitive Peak Off-state Voltage of 400V, the TIC226D provides exceptional value and efficiency. Upgrade your projects today with the TIC226D and experience the benefits of precision control and enhanced performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring durability and reliability.

Maximum DC Gate Trigger Current: 50 mA

Allows for precise and efficient triggering of the TRIAC, enhancing control and performance.

Configuration: SINGLE

Simplified design and installation due to single configuration.

Package Shape: RECTANGULAR

Space-saving and easy to integrate into various electronic circuits.

Terminal Form: THROUGH-HOLE

Facilitates easy and secure PCB mounting.

Maximum Leakage Current: 2 mA

Ensures minimal power loss and improves efficiency.

No. of Terminals: 3

Sufficient terminals for connection and control.

Package Style (Meter): FLANGE MOUNT

Sturdy mounting option for secure attachment.

Maximum Operating Temperature: 110 °C

Suitable for a wide range of operating environments.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

Enhanced functionality and versatility for different applications.

Minimum Operating Temperature: -40 °C

Can operate effectively in cold temperatures.

Terminal Position: SINGLE

Simplified connection setup.

Maximum RMS On-state Current: 8 A

Capable of handling high current loads with efficiency.

Maximum DC Gate Trigger Voltage: 2.5 V

Low trigger voltage requirement for efficient control.

Case Connection: MAIN TERMINAL 2

Clear terminal designation for easy wiring.

Repetitive Peak Off-state Voltage: 400 V

High voltage handling capacity for diverse applications.

Minimum Critical Rate of Rise of Commutation Voltage: 5 V/us

Ensures smooth and efficient switching operations.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

Fast response and reliable performance during voltage transitions.

Maximum Holding Current: 60 mA

Sufficient holding current for stable operation.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC226D attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Commutation Voltage:

5 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

60 mA

JESD-30 Code:

R-PSFM-T3

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC226D Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-21-898-6582, 5961218986582, 5961-99-118-6217, 5961991186217

NIIN

218986582, 991186217

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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