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2N5807

Texas Instruments

2N5807 by Texas Instruments

2N5807 by Texas Instruments is a TRIAC with max RMS current of 25A, DC gate trigger voltage of 4V, and repetitive peak off-state voltage of 400V. It is used as a trigger device in AC circuits, with an operating temperature range from -40 to 115°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,965 parts In-Stock

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Digiode

USA . 3,665 parts In-Stock

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3,665

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Native Components

USA . 246 parts In-Stock

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$0.097

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$0.093

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$0.093

Northwest PG Solutions

USA . 567 parts In-Stock

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$0.107

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$0.094

567

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$0.094

Parana Technologies

USA . 1,052 parts In-Stock

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$3.067

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$3.582

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1,052

$3.067

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$3.582

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Semicontronic

India . 1,318 parts In-Stock

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$3.100

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$3.022

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$3.007

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$3.100

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One Stop Electronics

USA . 667 parts In-Stock

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$3.100

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667

$3.100

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DigiPath Technology Company

USA . 1,715 parts In-Stock

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$3.377

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$3.107

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IDEA Electronic Components Group

UK . 1,581 parts In-Stock

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$3.446

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$3.101

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ChromeModa Solutions

Germany . 1,180 parts In-Stock

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$3.446

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$2.826

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AZTECH Wire

Italy . 689 parts In-Stock

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$17.718

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Ampacity Inc.

Singapore . 1,007 parts In-Stock

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$24.100

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Corphita

USA . 1,040 parts In-Stock

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Corohmni

South Africa . 303 parts In-Stock

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Overview

Unleash the power of quality electronics with the 2N5807 TRIAC from Texas Instruments. Designed for reliability and precision, this versatile component is perfect for a wide range of applications. From lighting control to motor speed regulation, the possibilities are endless. Trust in Texas Instruments' reputation for excellence and discover the value and benefits that the 2N5807 can bring to your projects. Upgrade your designs today with the 2N5807 TRIAC.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 120 mA

Higher trigger current ensures reliable and consistent operation, making this TRIAC suitable for a wide range of applications where precise triggering is crucial.

Maximum Leakage Current: 2 mA

Low leakage current helps in reducing power consumption and heat dissipation, making this TRIAC energy-efficient and reliable.

Maximum Operating Temperature: 115 °C

With a high operating temperature range, this TRIAC can withstand harsh environmental conditions and operate effectively in various industrial applications.

Trigger Device Type: TRIAC

Being a TRIAC, this device allows bidirectional conduction of current, making it suitable for controlling AC power loads such as motors, heaters, and lamps.

Minimum Operating Temperature: -40 °C

Wide temperature range allows this TRIAC to operate efficiently in extreme cold environments, providing reliable performance in diverse applications.

Maximum RMS On-state Current: 25 A

Capable of handling high current loads, this TRIAC is ideal for applications that require controlling heavy electrical loads with AC power.

Maximum DC Gate Trigger Voltage: 4 V

Low trigger voltage requirement ensures easy integration with control circuits, enabling seamless operation and precise control over switching functions.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage rating ensures safe operation and protection against voltage transients, making this TRIAC suitable for various industrial and consumer applications.

Maximum Holding Current: 100 mA

Higher holding current capability ensures the TRIAC remains in the on-state even in the presence of external noise or interference, enhancing reliability and stability in operation.

Technical Specifications

Triode For Alternating Current (TRIAC) 2N5807 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

120 mA

Maximum DC Gate Trigger Voltage:

4 V

Maximum Holding Current:

100 mA

Maximum Leakage Current:

2 mA

Maximum Operating Temperature:

115 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

25 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

2N5807 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-076-3976, 5961010763976

NIIN

010763976

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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