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2N5808

Texas Instruments

2N5808 by Texas Instruments

2N5808 by Texas Instruments is a TRIAC with max RMS on-state current of 25A, DC gate trigger voltage of 4V, and repetitive peak off-state voltage of 500V. It is used as a trigger device in AC circuits, with an operating temperature range from -40 to 115°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,976 parts In-Stock

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Digiode

USA . 604 parts In-Stock

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Native Components

USA . 439 parts In-Stock

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$0.097

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$0.093

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$0.093

Northwest PG Solutions

USA . 944 parts In-Stock

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$0.107

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$0.094

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One Stop Electronics

USA . 777 parts In-Stock

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$1.100

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Parana Technologies

USA . 787 parts In-Stock

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$3.356

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$3.880

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DigiPath Technology Company

USA . 991 parts In-Stock

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$3.696

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991

$3.696

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IDEA Electronic Components Group

UK . 2,272 parts In-Stock

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$3.771

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$3.394

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ChromeModa Solutions

Germany . 1,085 parts In-Stock

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$3.771

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$3.092

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AZTECH Wire

Italy . 239 parts In-Stock

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$8.904

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Ampacity Inc.

Singapore . 1,381 parts In-Stock

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$18.100

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Semicontronic

India . 1,272 parts In-Stock

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$27.100

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$26.422

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$26.287

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Corphita

USA . 1,320 parts In-Stock

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Corohmni

South Africa . 160 parts In-Stock

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Overview

Elevate your projects with the 2N5808 from Texas Instruments, a top-of-the-line TRIAC designed for maximum performance and reliability. With a reputation for excellence in electronic components, Texas Instruments ensures that this device meets the highest quality standards. Perfect for a wide range of applications, the 2N5808 offers unparalleled value and benefits to customers looking for a versatile and durable solution. Whether you're a seasoned professional or a hobbyist, trust Texas Instruments to provide you with the tools you need to bring your ideas to life.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 120 mA

Allows for precise and reliable triggering of the TRIAC, ensuring consistent performance.

Maximum Leakage Current: 2 mA

Low leakage current ensures efficient operation and minimizes power loss.

Maximum Operating Temperature: 115 °C

Can operate in high-temperature environments without risk of overheating, enhancing reliability.

Trigger Device Type: TRIAC

Utilizing a TRIAC as the trigger device provides smooth and efficient control of alternating current.

Minimum Operating Temperature: -40 °C

Capable of operating in extremely low temperatures, suitable for a wide range of environments.

Maximum RMS On-state Current: 25 A

Capable of handling high currents, making it suitable for various applications.

Maximum DC Gate Trigger Voltage: 4 V

Low trigger voltage ensures efficient and reliable operation of the TRIAC.

Repetitive Peak Off-state Voltage: 500 V

Withstands high off-state voltages, making it suitable for use in power control applications.

Maximum Holding Current: 100 mA

Capable of maintaining the on-state current without requiring continuous gate triggering.

Technical Specifications

Triode For Alternating Current (TRIAC) 2N5808 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

120 mA

Maximum DC Gate Trigger Voltage:

4 V

Maximum Holding Current:

100 mA

Maximum Leakage Current:

2 mA

Maximum Operating Temperature:

115 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

25 A

Repetitive Peak Off-state Voltage:

500 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

2N5808 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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