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DTA1

Onsemi

DTA1 by Onsemi

DTA1 by Onsemi is a TRIAC with 1A RMS current, 400V repetitive peak off-state voltage, and 5mA DC gate trigger current. It operates at a max on-state voltage of 1.5V and DC gate trigger voltage of 2V. Ideal for AC power control applications requiring precise switching capabilities.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,401 parts In-Stock

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Vyrian

USA . 2,266 parts In-Stock

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2,266

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Distributors (Availability)

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Kulean Microsystems

USA . 7,857 parts In-Stock

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7,857

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TANS Electronics

Latvia . 2,917 parts In-Stock

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SupplyDigital Components

Austria . 2,336 parts In-Stock

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2,336

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Problanco Electronics

Mexico . 1,907 parts In-Stock

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1,907

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UHIMA Technologies

Türkiye . 695 parts In-Stock

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695

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Northwest PG Solutions

USA . 613 parts In-Stock

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Corphita

USA . 371 parts In-Stock

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371

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Corohmni

South Africa . 363 parts In-Stock

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Native Components

USA . 265 parts In-Stock

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265

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Overview

Unleash the power of reliable and efficient performance with the DTA1 by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality in every product, including the DTA1 TRIAC. This versatile component is perfect for a wide range of applications, offering customers unparalleled value and benefits. Say goodbye to worries about performance and reliability - trust the DTA1 to deliver exceptional results every time.

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

Low on-state voltage helps in reducing power consumption and improving efficiency of the product.

Maximum DC Gate Trigger Current: 5 mA

Low gate trigger current requirement allows for easier control of the TRIAC, making it suitable for various applications.

Trigger Device Type: TRIAC

Being a TRIAC device, it allows for both positive and negative half cycles of the AC signal, making it versatile for AC switching applications.

Maximum RMS On-state Current: 1 A

The high on-state current capability enables the TRIAC to handle moderate to high current loads efficiently.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage requirement simplifies the control circuitry and ensures reliable triggering of the TRIAC.

Repetitive Peak Off-state Voltage: 400 V

The high off-state voltage rating provides ample safety margin for the device in high voltage applications, ensuring reliability and longevity.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA1 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum On-state Voltage:

1.5 V

Maximum RMS On-state Current:

1 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA1 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

2910-00-383-3038, 2910003833038

NIIN

003833038

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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