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DTB3B

Onsemi

DTB3B by Onsemi

The Onsemi DTB3B is a TRIAC with max on-state voltage of 1.5V, DC gate trigger current of 30mA, and leakage current of 1mA. Ideal for AC applications requiring up to 3A RMS on-state current, it operates b/w -40 °C to 110°C.

Median Price

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Lifecycle Status

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2

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< 1k

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Digiode

USA . 296 parts In-Stock

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Vyrian

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Native Components

USA . 911 parts In-Stock

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911

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TANS Electronics

Latvia . 5,977 parts In-Stock

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Kulean Microsystems

USA . 4,904 parts In-Stock

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SupplyDigital Components

Austria . 3,959 parts In-Stock

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Corphita

USA . 2,337 parts In-Stock

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Northwest PG Solutions

USA . 2,221 parts In-Stock

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UHIMA Technologies

Türkiye . 410 parts In-Stock

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Problanco Electronics

Mexico . 154 parts In-Stock

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Corohmni

South Africa . 57 parts In-Stock

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Overview

Discover the DTB3B by Onsemi, a top-quality TRIAC that is perfect for a wide range of applications. With a reputation for excellence, Onsemi ensures that this product meets the highest standards of performance and reliability. The DTB3B offers customers unmatched value, providing benefits such as efficient power control and reliable operation in challenging environments. Whether used in lighting controls, motor speed controls, or heating equipment, this TRIAC delivers superior performance, making it the ideal choice for your next project.

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

Lower voltage ensures efficient operation and reduced power consumption.

Maximum DC Gate Trigger Current: 30 mA

Allows for reliable triggering of the TRIAC without excessive current flow.

Maximum Leakage Current: 1 mA

Low leakage current helps in maintaining the stability and efficiency of the device.

Maximum Operating Temperature: 110 °C

High operating temperature range allows for use in various environments without overheating.

Trigger Device Type: TRIAC

TRIAC trigger device is known for its reliability and efficiency in controlling AC power.

Minimum Operating Temperature: -40 °C

Wide temperature range ensures usability in extreme cold conditions as well.

Maximum RMS On-state Current: 3 A

High current rating allows the device to handle heavy loads with ease.

Maximum DC Gate Trigger Voltage: 2 V

Low trigger voltage ensures the TRIAC can be easily activated with minimal power input.

Repetitive Peak Off-state Voltage: 100 V

High off-state voltage rating provides protection against voltage spikes and surges.

Maximum Holding Current: 25 mA

Sufficient holding current ensures the device remains in the on-state even in fluctuating conditions.

Technical Specifications

Triode For Alternating Current (TRIAC) DTB3B attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

25 mA

Maximum Leakage Current:

1 mA

Maximum On-state Voltage:

1.5 V

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

3 A

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTB3B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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