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TIC216B

Texas Instruments

TIC216B by Texas Instruments

TIC216B by Texas Instruments is a single TRIAC with 3 terminals, max. DC gate trigger current of 5 mA, and max. RMS on-state current of 6 A. It operates b/w -40 to 110°C, suitable for applications requiring a 4-quadrant logic level TRIAC like AC power control in various electronic devices.

Median Price

$0.703

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,801 parts In-Stock

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Digiode

USA . 3,077 parts In-Stock

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Bristol Electronics

USA . 105 parts In-Stock

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Microfarads

USA . 101 parts In-Stock

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Lakeview Electronics

USA . 66 parts In-Stock

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Corel Iberica Componentes, S.L.

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ECAB

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Parana Technologies

USA . 1,630 parts In-Stock

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$3.138

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$3.658

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DigiPath Technology Company

USA . 2,035 parts In-Stock

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$3.455

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$3.179

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ChromeModa Solutions

Germany . 2,549 parts In-Stock

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$3.526

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$2.891

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IDEA Electronic Components Group

UK . 1,514 parts In-Stock

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$3.526

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One Stop Electronics

USA . 1,224 parts In-Stock

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$11.100

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AZTECH Wire

Italy . 264 parts In-Stock

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Corphita

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Assy Fe

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Overview

Upgrade your electronics with the TIC216B by Texas Instruments, a top-quality Triode for Alternating Current (TRIAC) that offers unparalleled reliability and performance. Perfect for a wide range of applications, this TRIAC features a 4-quadrant logic level trigger device type, ensuring seamless operation in any project. With a maximum RMS on-state current of 6A and a repetitive peak off-state voltage of 200V, the TIC216B provides exceptional value and benefits to customers looking for a durable and efficient component for their designs. Trust Texas Instruments for cutting-edge technology that delivers results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this product lightweight and durable, suitable for a variety of applications.

Maximum DC Gate Trigger Current: 5 mA

The low DC gate trigger current requirement of 5 mA allows for efficient and accurate triggering of the TRIAC, improving overall performance and reliability.

Configuration: SINGLE

The single configuration simplifies the design and integration process, making this TRIAC easy to use in various setups.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact form factor, saving space and allowing for easier installation in tight spaces.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures secure and reliable connections, reducing the risk of loose connections or intermittent faults.

Maximum Leakage Current: 2 mA

With a low maximum leakage current of 2 mA, this TRIAC helps to minimize power wastage and improve efficiency in the circuit.

No. of Terminals: 3

Having 3 terminals allows for easy connectivity and compatibility with various circuit configurations, enhancing flexibility in design.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides a stable and secure mounting option, ensuring the TRIAC stays in place during operation.

Maximum Operating Temperature: 110 °C

With a high maximum operating temperature of 110°C, this TRIAC can withstand elevated temperatures without compromising performance or reliability.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

The 4 quadrant logic level TRIAC enables precise control over switching operations in all four quadrants, making it suitable for a wide range of applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures that this TRIAC can function reliably even in extreme cold environments.

Terminal Position: SINGLE

The single terminal position simplifies the connection process, reducing the chance of errors and ensuring a secure electrical connection.

Maximum RMS On-state Current: 6 A

With a maximum RMS on-state current of 6 A, this TRIAC is capable of handling higher loads, making it suitable for a wide range of power control applications.

Maximum DC Gate Trigger Voltage: 2.2 V

The low maximum DC gate trigger voltage of 2.2 V ensures efficient triggering of the TRIAC, reducing power consumption and improving performance.

Case Connection: MAIN TERMINAL 2

The case connection at MAIN TERMINAL 2 provides a convenient and standardized connection point, making it easy to integrate this TRIAC into different circuits.

Repetitive Peak Off-state Voltage: 200 V

The high repetitive peak off-state voltage of 200 V ensures that this TRIAC can safely handle high voltage applications without the risk of damage or failure.

Minimum Critical Rate of Rise of Commutation Voltage: 5 V/us

The minimum critical rate of rise of commutation voltage of 5 V/us ensures fast and reliable switching performance, reducing the risk of voltage spikes or transients.

Maximum Holding Current: 30 mA

The maximum holding current of 30 mA ensures that the TRIAC remains in the on-state even after the trigger current is removed, improving stability and reliability in the circuit.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC216B attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Additional Features:

SENSITIVE GATE

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Commutation Voltage:

5 V/us

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

2.2 V

Maximum Holding Current:

30 mA

JESD-30 Code:

R-PSFM-T3

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

6 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC216B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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