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TIC206E

Texas Instruments

TIC206E by Texas Instruments

TIC206E by Texas Instruments is a TRIAC with 3A RMS current, 500V repetitive peak off-state voltage, and 5mA max DC gate trigger current. It operates b/w -45°C to 125°C and finds application in AC power control circuits due to its TRIAC trigger device type.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 8,538 parts In-Stock

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Digiode

USA . 2,485 parts In-Stock

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Amar Radio Corporation

India . 800 parts In-Stock

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One Stop Electronics

USA . 253 parts In-Stock

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$0.100

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Parana Technologies

USA . 1,104 parts In-Stock

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$2.701

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$3.182

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DigiPath Technology Company

USA . 406 parts In-Stock

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$2.974

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$2.736

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406

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ChromeModa Solutions

Germany . 6,199 parts In-Stock

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$3.035

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$2.489

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IDEA Electronic Components Group

UK . 2,085 parts In-Stock

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$2.732

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AZTECH Wire

Italy . 394 parts In-Stock

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$12.697

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Corphita

USA . 1,685 parts In-Stock

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Overview

Unlock the power of efficient energy control with the TIC206E by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees top-notch quality and reliability. The TIC206E falls under the Triode For Alternating Current (TRIAC) category, making it perfect for a wide range of applications. Experience seamless performance and enhanced functionality with a maximum RMS On-state Current of 3 A and Repetitive Peak Off-state Voltage of 500 V. Trust in Texas Instruments to deliver cutting-edge technology that brings value and benefits to your projects.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 5 mA

Low gate trigger current allows for efficient control of the TRIAC, reducing power consumption and ensuring precise switching.

Maximum Leakage Current: 1 mA

Low leakage current helps in maintaining the off-state of the TRIAC, preventing accidental triggering and ensuring safety.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliability and stability of the TRIAC under harsh environmental conditions.

Trigger Device Type: TRIAC

Being a TRIAC allows bidirectional control of current flow, making it suitable for AC applications where current needs to be controlled in both directions.

Minimum Operating Temperature: -45 °C

Low minimum operating temperature allows the TRIAC to function effectively even in cold environments, increasing its versatility.

Maximum RMS On-state Current: 3 A

High maximum RMS on-state current capability of 3 A enables the TRIAC to handle moderate to high current loads efficiently.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage of 2 V ensures that the TRIAC can be easily controlled by low-power devices, enhancing its compatibility and usability.

Repetitive Peak Off-state Voltage: 500 V

High off-state voltage rating of 500 V ensures the TRIAC can withstand high voltage spikes and surges, improving its durability and reliability.

Maximum Holding Current: 30 mA

Sufficient holding current of 30 mA helps in maintaining the on-state of the TRIAC, preventing false turn-off and ensuring stable operation.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC206E attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

30 mA

Maximum Leakage Current:

1 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

3 A

Repetitive Peak Off-state Voltage:

500 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC206E Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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