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BTA08-600CW3G

Onsemi

BTA08-600CW3G by Onsemi

BTA08-600CW3G by Onsemi is a single TRIAC with 600V repetitive peak off-state voltage and 8A max RMS on-state current. It has a snubberless configuration, 35mA max DC gate trigger current, and operates b/w -40°C to 125°C. Ideal for AC power control applications requiring high reliability and performance.

Median Price

$3.431

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 900 parts In-Stock

1+ parts

$1.624

100+ parts

$1.307

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-

10k+ parts

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900

$1.624

$1.307

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Mouser Electronics

USA . 1,072 parts In-Stock

1+ parts

$4.020

100+ parts

$1.880

1k+ parts

$1.570

10k+ parts

-

1,072

$4.020

$1.880

$1.570

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DigiKey

USA . 581 parts In-Stock

1+ parts

$4.020

100+ parts

$1.878

1k+ parts

$1.573

10k+ parts

-

581

$4.020

$1.878

$1.573

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Verical

USA . 983 parts In-Stock

1+ parts

-

100+ parts

$2.842

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983

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$2.842

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,271 parts In-Stock

1+ parts

$1.543

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1,271

$1.543

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Vyrian

USA . 2,465 parts In-Stock

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$1.624

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-

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2,465

$1.624

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TME

Poland . 983 parts In-Stock

1+ parts

$2.270

100+ parts

$2.110

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-

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983

$2.270

$2.110

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 136 parts In-Stock

1+ parts

$1.462

100+ parts

-

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136

$1.462

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Corohmni

South Africa . 169 parts In-Stock

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$1.624

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169

$1.624

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Component Stockers USA

USA . 2,007 parts In-Stock

1+ parts

$1.890

100+ parts

$1.450

1k+ parts

$1.310

10k+ parts

-

2,007

$1.890

$1.450

$1.310

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Microchip USA

USA . 4,173 parts In-Stock

1+ parts

$18.200

100+ parts

-

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4,173

$18.200

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Problanco Electronics

Mexico . 6,932 parts In-Stock

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6,932

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TANS Electronics

Latvia . 5,541 parts In-Stock

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5,541

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SupplyDigital Components

Austria . 3,975 parts In-Stock

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3,975

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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Northwest PG Solutions

USA . 2,086 parts In-Stock

1+ parts

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$3.352

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2,086

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$3.352

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Perfect Parts

USA . 857 parts In-Stock

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857

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UHIMA Technologies

Türkiye . 629 parts In-Stock

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629

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Native Components

USA . 296 parts In-Stock

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$3.317

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296

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$3.317

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Kulean Microsystems

USA . 248 parts In-Stock

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248

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Overview

Upgrade your electronic devices with the BTA08-600CW3G by Onsemi, a high-quality TRIAC that guarantees exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this TRIAC is designed for a wide range of applications, ensuring seamless operation and enhanced functionality. With its impressive features, such as a maximum DC gate trigger current of 35 mA and a maximum RMS on-state current of 8 A, this product offers excellent value and benefits to customers looking for top-notch quality components. Trust Onsemi and experience the advantages of the BTA08-600CW3G in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection for the internal components of the TRIAC, ensuring a longer lifespan.

Maximum DC Gate Trigger Current: 35 mA

With a maximum DC gate trigger current of 35mA, this TRIAC can be easily triggered to switch on and off, providing reliable performance.

Maximum Operating Temperature: 125 °C

The TRIAC can operate efficiently at high temperatures up to 125°C, making it suitable for a variety of applications.

Repetitive Peak Off-state Voltage: 600 V

With a high repetitive peak off-state voltage of 600V, this TRIAC can handle high voltage applications with ease, ensuring safe and reliable operation.

Minimum Critical Rate of Rise of Off-state Voltage: 1500 V/us

The minimum critical rate of rise of off-state voltage of 1500V/us ensures rapid and efficient switching of the TRIAC, making it ideal for fast-paced applications.

Technical Specifications

Triode For Alternating Current (TRIAC) BTA08-600CW3G attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

1500 V/us

Maximum DC Gate Trigger Current:

35 mA

Maximum DC Gate Trigger Voltage:

1.1 V

Maximum Holding Current:

35 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

BTA08-600CW3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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