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DTB12E

Onsemi

DTB12E by Onsemi

DTB12E by Onsemi is a TRIAC with 1.3V max on-state voltage, 50mA DC gate trigger current, and 2mA max leakage current. Ideal for AC applications up to 12A RMS on-state current, it operates at a max temperature of 125 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,682 parts In-Stock

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Vyrian

USA . 1,331 parts In-Stock

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TANS Electronics

Latvia . 7,106 parts In-Stock

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SupplyDigital Components

Austria . 2,486 parts In-Stock

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Kulean Microsystems

USA . 1,990 parts In-Stock

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1,990

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Problanco Electronics

Mexico . 1,543 parts In-Stock

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Northwest PG Solutions

USA . 1,285 parts In-Stock

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$3.925

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UHIMA Technologies

Türkiye . 745 parts In-Stock

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Corphita

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Native Components

USA . 233 parts In-Stock

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Corohmni

South Africa . 214 parts In-Stock

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Overview

Discover the DTB12E by Onsemi, a top-quality TRIAC that promises reliability and superior performance. Manufactured by Onsemi, a trusted name in the industry, this versatile component is ideal for a wide range of applications. From lighting control to motor speed regulation, the DTB12E offers unmatched value and efficiency. With a maximum RMS on-state current of 12 A and a repetitive peak off-state voltage of 400 V, this TRIAC delivers the power and precision you need. Upgrade your projects with the DTB12E and experience the difference Onsemi quality can make.

Feature Benefit Bullets

Maximum On-state Voltage: 1.3 V

With a low maximum on-state voltage, this TRIAC product helps in minimizing power dissipation and improving overall efficiency.

Maximum DC Gate Trigger Current: 50 mA

The high maximum DC gate trigger current allows for reliable and consistent triggering of the TRIAC, ensuring smooth operation.

Maximum Leakage Current: 2 mA

The low maximum leakage current reduces wasted power and helps in maintaining the stability of the circuit.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this TRIAC product can withstand harsh operating conditions, making it reliable in various environments.

Trigger Device Type: TRIAC

Being a TRIAC, this product is capable of handling both positive and negative AC voltage cycles, making it suitable for a wide range of applications.

Maximum RMS On-state Current: 12 A

The high maximum RMS on-state current allows for the handling of heavy loads, making this product suitable for high-power applications.

Maximum DC Gate Trigger Voltage: 2 V

With a low maximum DC gate trigger voltage, this TRIAC product can be easily controlled with standard logic level signals, simplifying the circuit design.

Repetitive Peak Off-state Voltage: 400 V

The high repetitive peak off-state voltage capability of this TRIAC product ensures safe and reliable operation in high voltage applications.

Technical Specifications

Triode For Alternating Current (TRIAC) DTB12E attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.3 V

Maximum Operating Temperature:

125 Cel

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTB12E Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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