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DTB16F

Onsemi

DTB16F by Onsemi

DTB16F by Onsemi is a TRIAC with 1.4V max on-state voltage, 50mA DC gate trigger current, and 150A non-repetitive peak on-state current. Ideal for AC applications, it has a max operating temp of 125 °C and features a 3V max DC gate trigger voltage and 40mA max holding current.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,121 parts In-Stock

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Vyrian

USA . 946 parts In-Stock

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Kulean Microsystems

USA . 5,874 parts In-Stock

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TANS Electronics

Latvia . 3,417 parts In-Stock

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Problanco Electronics

Mexico . 1,615 parts In-Stock

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Corphita

USA . 1,612 parts In-Stock

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SupplyDigital Components

Austria . 1,023 parts In-Stock

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Native Components

USA . 991 parts In-Stock

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UHIMA Technologies

Türkiye . 353 parts In-Stock

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Corohmni

South Africa . 96 parts In-Stock

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Northwest PG Solutions

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Overview

Unleash the power of the DTB16F by Onsemi, a high-quality TRIAC that delivers unparalleled performance and reliability. Manufactured by industry leader Onsemi, this versatile component is perfect for a wide range of applications. Whether you're looking to control AC power in lighting systems or motor speed control, the DTB16F offers unmatched value and benefits. Say goodbye to downtime and hello to seamless operation with the DTB16F by Onsemi.

Feature Benefit Bullets

Maximum On-state Voltage: 1.4 V

Low on-state voltage helps in minimizing power losses and improving efficiency of the device.

Maximum DC Gate Trigger Current: 50 mA

The higher DC gate trigger current ensures reliable and consistent triggering of the device.

Non Repetitive Peak On-state Current: 150 A

High non-repetitive peak on-state current capability allows the device to handle large surges of current without damage.

Maximum Leakage Current: 2 mA

Low leakage current helps in reducing power consumption and heat generation in the device.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature tolerance makes the device suitable for a wide range of operating conditions.

Trigger Device Type: TRIAC

TRIAC design offers bidirectional control of current flow, making it ideal for AC power control applications.

Maximum DC Gate Trigger Voltage: 3 V

Low gate trigger voltage requirement ensures compatibility with a wide range of control systems and circuits.

Maximum Holding Current: 40 mA

The device's ability to maintain a holding current helps in stable operation and prevents unintended turn-off.

Technical Specifications

Triode For Alternating Current (TRIAC) DTB16F attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

3 V

Quick Connects Description:

0

Screw Terminals Description:

0

Maximum Holding Current:

40 mA

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

150 A

No. of Elements:

1

Maximum On-state Voltage:

1.4 V

Maximum Operating Temperature:

125 Cel

Sub-Category:

TRIACs

Trigger Device Type:

Trade Compliance

DTB16F Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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