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MAC223A8

Onsemi

MAC223A8 by Onsemi

MAC223A8 by Onsemi is a single TRIAC with 25A RMS on-state current and 600V repetitive peak off-state voltage. It operates b/w -40 to 125 °C, ideal for 4 quadrant logic level TRIAC applications. With a max DC gate trigger current of 50mA, it ensures efficient performance in various AC control systems.

Median Price

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Lifecycle Status

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Vyrian

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Anansix

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Digiode

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Classic Components Corporation

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Manotoh

Italy . 50 parts In-Stock

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Electronic Expediters

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DF Sales Co.

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DF Sales Co.

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M&R Communications

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Resion

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Electronics Depot

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One Stop Electronics

USA . 634 parts In-Stock

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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UNI Independent Distributors

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TANS Electronics

Latvia . 6,933 parts In-Stock

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A-Z Elektronik GmbH

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Alle Elektronik GmbH

Germany . 4,456 parts In-Stock

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Corphita

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Kulean Microsystems

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Problanco Electronics

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SupplyDigital Components

Austria . 748 parts In-Stock

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Corohmni

South Africa . 367 parts In-Stock

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UHIMA Technologies

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Assy Fe

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Overview

Discover the top-quality MAC223A8 by Onsemi, a versatile TRIAC perfect for a wide range of applications. With a reputation for excellence in manufacturing, Onsemi delivers reliable and durable products that meet the highest standards. The MAC223A8 offers customers exceptional value, benefits, and advantages, making it the go-to choice for all your AC switching needs. Don't settle for less when you can have the best with the MAC223A8!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the TRIAC durable and resistant to various environmental conditions.

Maximum DC Gate Trigger Current: 50 mA

The high gate trigger current ensures reliable and consistent switching of the TRIAC.

Configuration: SINGLE

The single configuration simplifies the circuit design and integration of the TRIAC.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and installation of the TRIAC in various applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures secure connections and stability during operation.

Maximum Leakage Current: 2 mA

The low leakage current helps in reducing power loss and improves the efficiency of the TRIAC.

No. of Terminals: 3

The 3 terminals provide versatility in circuit connections and enable multiple configurations.

Package Style (Meter): FLANGE MOUNT

The flange mount style allows for easy mounting on surfaces, enhancing the convenience of installation.

Maximum Operating Temperature: 125 °C

The high operating temperature range ensures reliable performance in various operating conditions.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

The 4 quadrant logic level trigger device type provides versatility in triggering options for different applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows for the TRIAC to be used in a wide range of environments and applications.

Terminal Finish: TIN

The TIN terminal finish offers good conductivity and corrosion resistance for reliable connections.

Terminal Position: SINGLE

The single terminal position simplifies the connection process and ensures easy integration into circuits.

Maximum RMS On-state Current: 25 A

The high maximum RMS on-state current capability allows for handling of high current loads with efficiency.

Maximum DC Gate Trigger Voltage: 2 V

The low gate trigger voltage requirement ensures efficient triggering and performance of the TRIAC.

Case Connection: MAIN TERMINAL 2

The case connection to main terminal 2 enables easy circuit layout and integration in various systems.

Repetitive Peak Off-state Voltage: 600 V

The high repetitive peak off-state voltage capability makes the TRIAC suitable for handling high voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 40 V/us

The minimum critical rate of rise of off-state voltage ensures fast and efficient switching capabilities of the TRIAC.

Maximum Holding Current: 50 mA

The high holding current ensures the TRIAC remains in the on-state even in the presence of small currents, enhancing reliability.

Technical Specifications

Triode For Alternating Current (TRIAC) MAC223A8 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

40 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

50 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

25 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

MAC223A8 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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