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DTB16C

Onsemi

DTB16C by Onsemi

DTB16C by Onsemi is a TRIAC with 1.4V max on-state voltage, 50mA max DC gate trigger current, and 150A non-repetitive peak on-state current. It operates at up to 125 °C and has a max leakage current of 2mA. Ideal for AC power control applications requiring precise switching capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,219 parts In-Stock

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Digiode

USA . 962 parts In-Stock

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Native Components

USA . 210 parts In-Stock

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$10.090

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210

$10.090

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Northwest PG Solutions

USA . 1,412 parts In-Stock

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$11.099

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$9.989

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$11.099

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Problanco Electronics

Mexico . 7,105 parts In-Stock

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SupplyDigital Components

Austria . 4,215 parts In-Stock

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Kulean Microsystems

USA . 3,994 parts In-Stock

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TANS Electronics

Latvia . 2,636 parts In-Stock

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UHIMA Technologies

Türkiye . 873 parts In-Stock

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Corphita

USA . 465 parts In-Stock

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Corohmni

South Africa . 59 parts In-Stock

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Overview

Experience unmatched quality and reliability with the Onsemi DTB16C TRIAC. Manufactured by industry leader Onsemi, this product offers superior performance and versatility for a wide range of applications. Whether you're looking to control AC power in lighting systems or motor speed control, the DTB16C delivers exceptional value and benefits. Trust in Onsemi's commitment to excellence and elevate your projects with the DTB16C TRIAC.

Feature Benefit Bullets

Maximum On-state Voltage: 1.4 V

Low maximum on-state voltage helps in reducing power loss and heat generation, leading to improved efficiency and reliability of the product.

Maximum DC Gate Trigger Current: 50 mA

The high maximum DC gate trigger current ensures reliable and consistent switching performance, making this product suitable for a wide range of applications.

Non Repetitive Peak On-state Current: 150 A

The high non repetitive peak on-state current allows the product to handle heavy loads and transient surges, making it robust and durable.

Maximum Leakage Current: 2 mA

The low maximum leakage current indicates minimal power loss when the device is in the off-state, contributing to energy efficiency.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand elevated temperatures without compromising performance, ensuring reliability in harsh environments.

Trigger Device Type: TRIAC

Being a TRIAC allows for bidirectional control of alternating current, making it suitable for AC power control applications.

Maximum DC Gate Trigger Voltage: 3 V

The low maximum DC gate trigger voltage facilitates easy and efficient triggering of the device, enhancing its overall performance.

Maximum Holding Current: 40 mA

The maximum holding current ensures that the device remains in the on-state once triggered, preventing unintentional turn-off and ensuring stable operation.

Technical Specifications

Triode For Alternating Current (TRIAC) DTB16C attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

3 V

Quick Connects Description:

0

Screw Terminals Description:

0

Maximum Holding Current:

40 mA

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

150 A

No. of Elements:

1

Maximum On-state Voltage:

1.4 V

Maximum Operating Temperature:

125 Cel

Sub-Category:

TRIACs

Trigger Device Type:

Trade Compliance

DTB16C Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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