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BTA08-800BW3G

Onsemi

BTA08-800BW3G by Onsemi

BTA08-800BW3G by Onsemi is a single TRIAC with 800V repetitive peak off-state voltage and 8A max RMS on-state current. It operates b/w -40 to 125 °C, with a max DC gate trigger voltage of 1.1V. Ideal for snubberless applications in various electronic devices.

Median Price

$2.620

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,276 parts In-Stock

1+ parts

$2.620

100+ parts

$1.172

1k+ parts

$0.880

10k+ parts

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1,276

$2.620

$1.172

$0.880

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Mouser Electronics

USA . 72 parts In-Stock

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$2.620

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72

$2.620

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Distributors (In-Stock)

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Digiode

USA . 1,950 parts In-Stock

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$2.584

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1,950

$2.584

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Vyrian

USA . 186 parts In-Stock

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$2.720

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186

$2.720

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Distributors (Availability)

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Component Stockers USA

USA . 1,125 parts In-Stock

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$2.340

100+ parts

$1.550

1k+ parts

$1.110

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1,125

$2.340

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$1.110

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Corphita

USA . 1,284 parts In-Stock

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$2.448

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$2.448

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Corohmni

South Africa . 102 parts In-Stock

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$2.540

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102

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QUARKTWIN TECHNOLOGY LTD

USA . 10,661 parts In-Stock

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TANS Electronics

Latvia . 7,635 parts In-Stock

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Problanco Electronics

Mexico . 6,950 parts In-Stock

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SupplyDigital Components

Austria . 6,175 parts In-Stock

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Microchip USA

USA . 4,953 parts In-Stock

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Northwest PG Solutions

USA . 3,218 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Kulean Microsystems

USA . 1,619 parts In-Stock

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Perfect Parts

USA . 1,232 parts In-Stock

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Native Components

USA . 1,053 parts In-Stock

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UHIMA Technologies

Türkiye . 826 parts In-Stock

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826

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Kepictronics

USA . 250 parts In-Stock

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Overview

Discover the power of the BTA08-800BW3G by Onsemi - a top-quality TRIAC that delivers reliable performance and durability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this TRIAC is perfect for a wide range of applications. With its high maximum RMS on-state current and snubberless design, this product offers exceptional value and benefits to customers. Say goodbye to reliability issues and hello to seamless operation with the BTA08-800BW3G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product durable and lightweight, ideal for various applications.

Maximum DC Gate Trigger Current: 50 mA

The high gate trigger current ensures reliable and consistent triggering of the TRIAC, enhancing performance.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making the product easy to use.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient mounting and placement within electronic systems.

Maximum Leakage Current: 2 mA

Low leakage current ensures energy efficiency and helps prevent unnecessary power loss.

No. of Terminals: 3

Having 3 terminals allows for easy connection and integration into circuitry.

Package Style (Meter): FLANGE MOUNT

The flange mount style facilitates secure installation and stable connection in various setups.

Maximum Operating Temperature: 125 °C

With a high operating temperature range, the TRIAC can perform reliably in a wide range of environments.

Trigger Device Type: SNUBBERLESS TRIAC

The use of snubberless technology reduces electromagnetic interference and improves reliability.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures functionality even in colder conditions.

Repetitive Peak Off-state Voltage: 800 V

A high peak off-state voltage rating allows for use in high voltage applications without risk of damage.

Maximum Holding Current: 60 mA

The high holding current ensures the TRIAC remains in the on-state even under varying conditions.

Technical Specifications

Triode For Alternating Current (TRIAC) BTA08-800BW3G attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

2000 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

1.1 V

Maximum Holding Current:

60 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

BTA08-800BW3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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