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NYT6-5D6DT4G

Onsemi

NYT6-5D6DT4G by Onsemi

NYT6-5D6DT4G by Onsemi is a TRIAC with 10mA DC Gate Trigger Current, 6A RMS On-state Current, and 600V Repetitive Peak Off-state Voltage. It operates b/w -40 °C to 110°C, making it suitable for various AC power control applications requiring precise switching capabilities in a compact surface-mount package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,279 parts In-Stock

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Digiode

USA . 436 parts In-Stock

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Kulean Microsystems

USA . 6,227 parts In-Stock

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SupplyDigital Components

Austria . 3,277 parts In-Stock

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Problanco Electronics

Mexico . 1,010 parts In-Stock

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UHIMA Technologies

Türkiye . 928 parts In-Stock

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Corphita

USA . 690 parts In-Stock

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TANS Electronics

Latvia . 374 parts In-Stock

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Corohmni

South Africa . 52 parts In-Stock

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Overview

Discover the NYT6-5D6DT4G by Onsemi, a top-quality TRIAC that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this TRIAC is ideal for a wide range of applications. With a maximum RMS on-state current of 6A and a repetitive peak off-state voltage of 600V, this product provides exceptional value and benefits to customers. Whether you need it for lighting control, motor speed control, or heating applications, the NYT6-5D6DT4G ensures smooth and efficient operation. Experience the advantages of this TRIAC and elevate your projects to the next level with Onsemi's innovative technology.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 10 mA

Low gate trigger current allows for efficient and reliable switching of the TRIAC.

Surface Mount: YES

Surface mount design saves space, simplifies assembly, and allows for high-density mounting on PCBs.

Maximum Leakage Current: 0.001 mA

Low leakage current ensures minimal power loss and enhances overall efficiency of the device.

Maximum Operating Temperature: 110 °C

High maximum operating temperature ensures reliable performance even in harsh environmental conditions.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

4-quadrant logic level TRIAC provides enhanced control and flexibility in switching applications.

Terminal Finish: TIN

TIN terminal finish offers good solderability and corrosion resistance, ensuring long-term reliability.

Maximum RMS On-state Current: 6 A

High RMS on-state current capability allows for handling of heavy loads with ease.

Maximum DC Gate Trigger Voltage: 1.3 V

Low gate trigger voltage ensures efficient switching and reduces power dissipation in the gate circuit.

Repetitive Peak Off-state Voltage: 600 V

High off-state voltage rating provides robust isolation and protection against voltage spikes.

Minimum Critical Rate of Rise of Off-state Voltage: 60 V/us

Minimum critical rate of rise of off-state voltage ensures reliable performance and protection against voltage transients.

Maximum Holding Current: 20 mA

High holding current ensures the device remains in the on-state even under varying load conditions.

Technical Specifications

Triode For Alternating Current (TRIAC) NYT6-5D6DT4G attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

60 V/us

Maximum DC Gate Trigger Current:

10 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

20 mA

JESD-609 Code:

e3

Maximum Leakage Current:

.001 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

6 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

YES

Terminal Finish:

TIN

Trigger Device Type:

Trade Compliance

NYT6-5D6DT4G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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