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2N6075A

Onsemi

2N6075A by Onsemi

2N6075A by Onsemi is a TRIAC with 600V repetitive peak off-state voltage, 4A max RMS on-state current, and 20mA DC gate trigger current. It is used in applications requiring isolated case connection, such as motor control and lighting dimming systems.

Median Price

$5.100

Lifecycle Status

Suppliers In-Stock

17

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American Microsemiconductor Inc.

USA . 274 parts In-Stock

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ComSIT Distribution GmbH

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Digiode

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R&J Components

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500

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Tech-Mark Corp

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370

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Vyrian

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ACDS - Activité Composants Distribution Service

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Connector Distribution Corp

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Right Parts Inc.

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Electronic Expediters

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LittleDiode

UK . 24 parts In-Stock

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Ashlea Components Ltd

UK . 9 parts In-Stock

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Sogenti Electronics

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Prism Electronics

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Bristol Electronics

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Donberg Electronics Ltd

Ireland . 3 parts In-Stock

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Legend Electronics Inc.

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Native Components

USA . 958 parts In-Stock

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$0.288

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$0.276

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Northwest PG Solutions

USA . 1,597 parts In-Stock

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$0.666

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Corohmni

South Africa . 167 parts In-Stock

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Kepictronics

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TANS Electronics

Latvia . 6,402 parts In-Stock

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Glotronic Ltd.

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SupplyDigital Components

Austria . 1,690 parts In-Stock

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Problanco Electronics

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Corphita

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UHIMA Technologies

Türkiye . 943 parts In-Stock

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RTC Component Inc.

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Kulean Microsystems

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Perfect Parts

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Assy Fe

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Overview

Unleash the power of innovation with the 2N6075A by Onsemi, a top-quality TRIAC designed to exceed your expectations. Manufactured by industry leader Onsemi, this TRIAC offers unparalleled reliability and performance in a variety of applications. From controlling power in appliances to regulating lighting systems, the 2N6075A delivers exceptional value and benefits to customers seeking precision and efficiency. Trust Onsemi to provide cutting-edge solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and durability, ensuring the product is reliable and long-lasting.

Maximum DC Gate Trigger Current: 20 mA

Allows for precise control of the TRIAC, making it suitable for a variety of applications.

Configuration: SINGLE

Simplified setup and use for straightforward applications.

Package Shape: RECTANGULAR

Compact design for easy integration into circuits or systems.

Terminal Form: THROUGH-HOLE

Easy to solder and mount onto circuit boards or terminals.

Maximum Leakage Current: 2 mA

Low leakage current ensures efficiency and minimal power loss.

No. of Terminals: 3

Simple connection setup for basic circuit requirements.

Package Style (Meter): FLANGE MOUNT

Secure mounting and installation in electronic devices.

Maximum Operating Temperature: 110 °C

Can withstand high temperatures, suitable for a wide range of operating environments.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

Enhanced control and performance in various applications.

Minimum Operating Temperature: -40 °C

Operates reliably in cold environments without impacting performance.

Terminal Finish: TIN LEAD

Provides good conductivity and solderability for reliable connections.

Terminal Position: SINGLE

Simplified wiring setup for ease of installation.

Maximum RMS On-state Current: 4 A

Able to handle moderate current loads effectively.

Maximum DC Gate Trigger Voltage: 2.5 V

Low trigger voltage requirement for efficient control of the device.

Case Connection: ISOLATED

Helps prevent signal interference and ensures stable operation.

Repetitive Peak Off-state Voltage: 600 V

Suitable for applications requiring high voltage handling capabilities.

Maximum Holding Current: 30 mA

Can maintain the ON state reliably without false triggering.

Peak Reflow Temperature °C: 235

Can withstand high temperatures during reflow soldering processes without damage.

Technical Specifications

Triode For Alternating Current (TRIAC) 2N6075A attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Additional Features:

CMOS COMPATIBLE

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

20 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

30 mA

JEDEC-95 Code:

TO-225

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

2N6075A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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