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MAC997B8RL1

Onsemi

MAC997B8RL1 by Onsemi

MAC997B8RL1 by Onsemi is a single TRIAC with 600V repetitive peak off-state voltage and 0.8A max RMS on-state current. It operates b/w -40 to 110 °C, ideal for controlling AC power in various applications like dimmers, motor speed controllers, and heating control systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,292 parts In-Stock

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Digiode

USA . 1,881 parts In-Stock

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1,881

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Kulean Microsystems

USA . 5,963 parts In-Stock

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TANS Electronics

Latvia . 5,054 parts In-Stock

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Problanco Electronics

Mexico . 3,073 parts In-Stock

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UHIMA Technologies

Türkiye . 944 parts In-Stock

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Corohmni

South Africa . 278 parts In-Stock

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SupplyDigital Components

Austria . 190 parts In-Stock

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Corphita

USA . 156 parts In-Stock

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Overview

Upgrade your electronic devices with the MAC997B8RL1 by Onsemi, a top-quality TRIAC that guarantees reliability and performance. Manufactured by industry leader Onsemi, this product offers unbeatable value with its superior design and functionality. Perfect for a wide range of applications, this TRIAC is the ideal choice for professionals and hobbyists alike. Experience the benefits of seamless operation and enhanced efficiency with the MAC997B8RL1 - the perfect solution for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides high durability and resistance to harsh environments, making the product reliable for long-term use.

Maximum DC Gate Trigger Current: 5 mA

Allows for efficient and precise control over the device, ensuring accurate switching performance.

Configuration: SINGLE

Simplified design and operation, suitable for straightforward applications.

Package Shape: ROUND

Facilitates easy mounting and installation in various electronic systems.

Terminal Form: THROUGH-HOLE

Enables secure and stable connections, reducing the risk of loose connections.

Maximum Leakage Current: 0.01 mA

Ensures minimal power loss and increases overall efficiency of the product.

No. of Terminals: 3

Simplifies the wiring process and reduces complexity in circuit connections.

Package Style (Meter): CYLINDRICAL

Offers a compact and space-saving design, suitable for applications with limited space.

Maximum Operating Temperature: 110 °C

Allows for reliable operation in a wide range of temperature conditions, increasing the product's versatility.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

Provides enhanced triggering capabilities and precise control for various switching applications.

Minimum Operating Temperature: -40 °C

Ensures operation in extreme low-temperature environments, making the product suitable for diverse applications.

Terminal Finish: TIN LEAD

Enhances conductivity and solderability, ensuring strong and reliable terminal connections.

Terminal Position: BOTTOM

Facilitates easier PCB mounting and soldering, enhancing the overall assembly process.

Maximum RMS On-state Current: 0.8 A

Supports high current handling capacity, making the product suitable for power applications.

Maximum DC Gate Trigger Voltage: 2 V

Allows for low-power triggering, reducing the energy consumption of the device.

Repetitive Peak Off-state Voltage: 600 V

Provides high voltage handling capacity, making the product reliable for high-voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 20 V/us

Ensures quick response and reliable performance during voltage spikes or transients.

Maximum Holding Current: 10 mA

Maintains conduction state even after the gate signal is removed, offering stability in switching applications.

Peak Reflow Temperature °C: 235

Withstands high-temperature reflow soldering processes, ensuring robust assembly and long-term reliability.

Technical Specifications

Triode For Alternating Current (TRIAC) MAC997B8RL1 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

20 V/us

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

10 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

Maximum Leakage Current:

.01 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

MAC997B8RL1 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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