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TIC253S

Texas Instruments

TIC253S by Texas Instruments

TIC253S by Texas Instruments is a TRIAC with 20A RMS current, 700V repetitive peak off-state voltage, and 125°C max operating temp. Ideal for AC power control in applications like lighting dimmers and motor speed controllers due to its 50mA gate trigger current and -40 to 125°C operating range.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 7,245 parts In-Stock

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Digiode

USA . 4,013 parts In-Stock

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One Stop Electronics

USA . 468 parts In-Stock

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$1.100

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468

$1.100

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Parana Technologies

USA . 2,206 parts In-Stock

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$1.874

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$2.418

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DigiPath Technology Company

USA . 2,328 parts In-Stock

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$2.064

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$2.064

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ChromeModa Solutions

Germany . 4,864 parts In-Stock

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$2.106

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$1.727

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IDEA Electronic Components Group

UK . 1,536 parts In-Stock

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$2.106

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$1.895

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Ampacity Inc.

Singapore . 470 parts In-Stock

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$15.100

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$15.100

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Semicontronic

India . 1,178 parts In-Stock

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$18.100

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$17.648

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$17.557

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AZTECH Wire

Italy . 523 parts In-Stock

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$18.341

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Corphita

USA . 4,518 parts In-Stock

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Corohmni

South Africa . 59 parts In-Stock

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Overview

Discover the power and reliability of Texas Instruments with the TIC253S TRIAC. Perfect for a variety of applications, this high-quality component offers maximum DC Gate Trigger Current of 50 mA and a Repetitive Peak Off-state Voltage of 700 V. With a wide operating temperature range and superior performance, the TIC253S ensures optimal functionality for your projects. Trust in Texas Instruments for top-notch quality and innovation in every component.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 50 mA

The low trigger current requirement makes this TRIAC energy efficient and easy to control.

Maximum Leakage Current: 2 mA

The low leakage current ensures that the TRIAC does not consume unnecessary power when in the off state, improving overall efficiency.

Maximum Operating Temperature: 125 °C

The high operating temperature range allows this TRIAC to be used in a variety of environments without the risk of overheating.

Trigger Device Type: TRIAC

The TRIAC trigger device type ensures reliable and precise switching of AC loads, making this product a dependable choice for alternating current applications.

Minimum Operating Temperature: -40 °C

The wide operating temperature range allows this TRIAC to function effectively in both hot and cold climates, making it versatile for various applications.

Maximum RMS On-state Current: 20 A

The high maximum RMS on-state current rating allows this TRIAC to handle heavy electrical loads with ease, making it suitable for high-power applications.

Maximum DC Gate Trigger Voltage: 2.5 V

The low gate trigger voltage requirement makes this TRIAC compatible with a wide range of control circuits and ensures efficient triggering.

Repetitive Peak Off-state Voltage: 700 V

The high repetitive peak off-state voltage rating provides ample protection against voltage spikes and ensures the TRIAC's longevity and durability.

Maximum Holding Current: 50 mA

The maximum holding current rating ensures reliable operation of the TRIAC in conducting state and helps prevent false triggering, making this product a dependable choice for continuous operation.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC253S attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

20 A

Repetitive Peak Off-state Voltage:

700 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC253S Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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