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TIC201M

Texas Instruments

TIC201M by Texas Instruments

TIC201M by Texas Instruments is a TRIAC with 2.5A RMS current, 600V repetitive peak off-state voltage, and 25mA DC gate trigger current. It operates b/w -40 to 110 °C and is ideal for AC power control applications requiring precise switching capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,839 parts In-Stock

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Vyrian

USA . 3,159 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 94 parts In-Stock

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Electronics Depot

USA . 15 parts In-Stock

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LittleDiode

UK . 9 parts In-Stock

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Parana Technologies

USA . 1,843 parts In-Stock

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$2.571

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$3.061

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$2.571

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$3.061

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DigiPath Technology Company

USA . 53 parts In-Stock

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$2.831

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$2.605

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53

$2.831

$2.605

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ChromeModa Solutions

Germany . 3,458 parts In-Stock

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$2.889

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$2.369

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IDEA Electronic Components Group

UK . 2,035 parts In-Stock

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$2.889

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$2.600

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AZTECH Wire

Italy . 432 parts In-Stock

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$7.362

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One Stop Electronics

USA . 1,623 parts In-Stock

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$20.100

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Kepictronics

USA . 15,000 parts In-Stock

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Assy Fe

Spain . 1,350 parts In-Stock

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Corphita

USA . 1,092 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 94 parts In-Stock

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Overview

Elevate your projects with the TIC201M from Texas Instruments, a top-quality TRIAC that sets the standard for performance and reliability. Designed to handle a wide range of applications, this versatile component offers superior durability and precision, making it the ideal choice for your electrical needs. Trust in Texas Instruments' renowned expertise and innovation to deliver unmatched value and benefits to customers seeking optimal performance. Experience the difference with the TIC201M and take your projects to new heights.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 25 mA

This high trigger current ensures reliable and consistent operation of the TRIAC.

Maximum Leakage Current: 1 mA

Low leakage current helps in reducing power consumption and ensures efficiency.

Maximum Operating Temperature: 110 °C

With a high operating temperature range, this TRIAC can withstand harsh environmental conditions.

Trigger Device Type: TRIAC

Being a TRIAC, it is suitable for AC applications and offers bidirectional current control.

Minimum Operating Temperature: -40 °C

The wide temperature range allows for reliable performance in both hot and cold environments.

Maximum RMS On-state Current: 2.5 A

The high on-state current rating allows for handling higher loads safely.

Maximum DC Gate Trigger Voltage: 2.5 V

Low gate trigger voltage makes the TRIAC easy to control and ideal for low voltage applications.

Repetitive Peak Off-state Voltage: 600 V

This high off-state voltage rating enables the TRIAC to switch high voltage loads.

Minimum Critical Rate of Rise of Commutation Voltage: 2 V/us

This critical rate helps in smooth switching of AC loads minimizing voltage spikes.

Minimum Critical Rate of Rise of Off-state Voltage: 50 V/us

High critical rate of rise ensures fast turn-off and reduces power dissipation.

Maximum Holding Current: 30 mA

The holding current ensures the TRIAC remains in the on-state even after the gate signal is removed.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC201M attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

2 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

30 mA

Maximum Leakage Current:

1 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

2.5 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC201M Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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