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TIC201N

Texas Instruments

TIC201N by Texas Instruments

TIC201N by Texas Instruments is a TRIAC with 2.5A RMS On-state Current, 800V Repetitive Peak Off-state Voltage, and 25mA Max DC Gate Trigger Current. Ideal for AC power control applications due to its high operating temperature range (-40°C to 110°C) and low leakage current of 1mA.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,346 parts In-Stock

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Digiode

USA . 1,104 parts In-Stock

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One Stop Electronics

USA . 1,369 parts In-Stock

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$0.100

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$0.100

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Parana Technologies

USA . 615 parts In-Stock

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$1.960

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$2.494

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$1.960

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DigiPath Technology Company

USA . 1,451 parts In-Stock

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$2.158

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$1.985

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ChromeModa Solutions

Germany . 967 parts In-Stock

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$2.202

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$1.806

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IDEA Electronic Components Group

UK . 65 parts In-Stock

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$2.202

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$1.982

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AZTECH Wire

Italy . 551 parts In-Stock

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$12.469

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Semicontronic

India . 302 parts In-Stock

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$17.100

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$16.672

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Corphita

USA . 2,255 parts In-Stock

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Corohmni

South Africa . 131 parts In-Stock

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Overview

Upgrade your electronics with the high-quality TIC201N Triode For Alternating Current (TRIAC) from Texas Instruments. Designed for efficiency and reliability, this TRIAC offers a wide range of applications from lighting controls to motor speed controls. With a maximum RMS On-state Current of 2.5 A and a Repetitive Peak Off-state Voltage of 800 V, this TRIAC delivers top-notch performance in a variety of scenarios. Trust Texas Instruments to provide you with the best quality components for your projects. Elevate your electronics with the TIC201N today!

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 25 mA

With a high maximum DC gate trigger current, this TRIAC can be easily controlled and triggered, ensuring reliable performance.

Maximum Leakage Current: 1 mA

The low maximum leakage current of 1 mA indicates that this TRIAC has minimal current loss when in the off-state, improving efficiency.

Maximum Operating Temperature: 110 °C

With a high maximum operating temperature of 110°C, this TRIAC can withstand high temperatures, making it suitable for various environmental conditions.

Trigger Device Type: TRIAC

Being a TRIAC, this device can conduct current in both directions, providing versatility in AC switching applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures that this TRIAC can operate effectively in cold environments as well.

Maximum RMS On-state Current: 2.5 A

With a maximum RMS on-state current of 2.5 A, this TRIAC can handle higher current loads, extending its range of applications.

Maximum DC Gate Trigger Voltage: 2.5 V

The low maximum DC gate trigger voltage of 2.5 V indicates that this TRIAC requires minimal voltage to trigger, reducing power consumption.

Repetitive Peak Off-state Voltage: 800 V

The high repetitive peak off-state voltage of 800 V allows this TRIAC to switch high voltage AC loads, making it suitable for various power control applications.

Minimum Critical Rate of Rise of Commutation Voltage: 2 V/us

With a minimum critical rate of rise of commutation voltage of 2 V/us, this TRIAC can switch between on and off states efficiently, reducing switching losses.

Minimum Critical Rate of Rise of Off-state Voltage: 50 V/us

The minimum critical rate of rise of off-state voltage of 50 V/us ensures that this TRIAC can turn off quickly and prevent unintentional conduction, enhancing safety.

Maximum Holding Current: 30 mA

With a maximum holding current of 30 mA, this TRIAC can maintain its conducting state reliably, ensuring stability during operation.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC201N attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

2 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

30 mA

Maximum Leakage Current:

1 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

2.5 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC201N Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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