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DTB3E

Onsemi

DTB3E by Onsemi

The Onsemi DTB3E is a TRIAC with 1.5V max on-state voltage, 30mA max DC gate trigger current, and 1mA max leakage current. It operates b/w -40 °C to 110°C, suitable for AC power control applications like dimmers and motor speed controllers.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,237 parts In-Stock

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Vyrian

USA . 60 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 568 parts In-Stock

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$0.472

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$0.453

568

$0.472

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$0.453

Northwest PG Solutions

USA . 2,073 parts In-Stock

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$0.519

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$0.458

2,073

$0.519

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$0.458

TANS Electronics

Latvia . 8,193 parts In-Stock

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8,193

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SupplyDigital Components

Austria . 4,504 parts In-Stock

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4,504

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Kulean Microsystems

USA . 4,377 parts In-Stock

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4,377

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Problanco Electronics

Mexico . 3,243 parts In-Stock

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UHIMA Technologies

Türkiye . 659 parts In-Stock

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659

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Corohmni

South Africa . 366 parts In-Stock

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Corphita

USA . 308 parts In-Stock

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Overview

Looking to upgrade your electronic devices with reliable and high-quality components? Look no further than the DTB3E by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch Triode For Alternating Current (TRIAC) products that guarantee superior performance and durability. Whether you're in need of power control in lighting or heating applications, this product offers unmatched value, benefits, and advantages to meet all your needs. Trust Onsemi for quality you can count on.

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

Low on-state voltage reduces power loss and heat generation, increasing efficiency.

Maximum DC Gate Trigger Current: 30 mA

Higher gate trigger current ensures reliable switching operation.

Maximum Leakage Current: 1 mA

Low leakage current improves overall performance and reduces energy consumption.

Maximum Operating Temperature: 110 °C

Wide operating temperature range allows for use in various environments without compromising performance.

Trigger Device Type: TRIAC

TRIAC trigger device provides bidirectional control of current flow, making it suitable for AC applications.

Minimum Operating Temperature: -40 °C

Operational at low temperatures ensures reliability in cold environments.

Maximum RMS On-state Current: 3 A

High on-state current handling capability makes it suitable for medium to high power applications.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage ensures efficient switching with minimal power loss.

Repetitive Peak Off-state Voltage: 400 V

High repetitive off-state voltage allows for safe operation in high voltage applications.

Maximum Holding Current: 25 mA

Holding current ensures the TRIAC remains on even after the gate voltage is removed, enhancing stability.

Technical Specifications

Triode For Alternating Current (TRIAC) DTB3E attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

25 mA

Maximum Leakage Current:

1 mA

Maximum On-state Voltage:

1.5 V

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

3 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTB3E Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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