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2N6070A

Onsemi

2N6070A by Onsemi

2N6070A by Onsemi is a TRIAC with 20mA DC Gate Trigger Current, 2mA Leakage Current, and 110 °C Max Operating Temp. Ideal for applications requiring a Trigger Device Type TRIAC with 2A Max RMS On-state Current and 100V Repetitive Peak Off-state Voltage.

Median Price

$0.159

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

2N6070A by Onsemi
Compare Share

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$0.159

1k+ parts

$0.132

10k+ parts

$0.117

500

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$0.159

$0.132

$0.117

Distributors (In-Stock)

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Digiode

USA . 175 parts In-Stock

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$0.124

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$0.124

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Vyrian

USA . 3,510 parts In-Stock

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MISTER SPROCKETS

USA . 1,504 parts In-Stock

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R&J Components

USA . 1,000 parts In-Stock

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Electronic Expediters

USA . 460 parts In-Stock

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460

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Resion

USA . 101 parts In-Stock

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Prism Electronics

USA . 64 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 42 parts In-Stock

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Microfarads

USA . 4 parts In-Stock

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Bristol Electronics

USA . 4 parts In-Stock

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GES GmbH

Germany . 2 parts In-Stock

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Corphita

USA . 450 parts In-Stock

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$0.117

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$0.117

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Corohmni

South Africa . 440 parts In-Stock

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$0.130

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$0.130

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QUARKTWIN TECHNOLOGY LTD

USA . 8,354 parts In-Stock

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TANS Electronics

Latvia . 8,240 parts In-Stock

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SupplyDigital Components

Austria . 3,364 parts In-Stock

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Kulean Microsystems

USA . 2,798 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Northwest PG Solutions

USA . 1,910 parts In-Stock

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$3.851

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Problanco Electronics

Mexico . 1,311 parts In-Stock

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RTC Component Inc.

USA . 1,000 parts In-Stock

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Native Components

USA . 639 parts In-Stock

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$3.812

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639

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UHIMA Technologies

Türkiye . 359 parts In-Stock

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Perfect Parts

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Assy Fe

Spain . 25 parts In-Stock

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Overview

Unlock the power of seamless control with the Onsemi 2N6070A TRIAC. Designed by a trusted manufacturer, this device offers reliability and superior performance in a variety of applications. From dimmers to motor control, the possibilities are endless. Say goodbye to limitations and hello to precision with the 2N6070A. Experience the value of quality engineering and the benefits of effortless operation. Choose excellence, choose Onsemi.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 20 mA

The high maximum gate trigger current allows for reliable and consistent triggering of the TRIAC, ensuring the product functions effectively.

Maximum Leakage Current: 2 mA

Low leakage current helps in reducing power consumption and improves efficiency of the product.

Maximum Operating Temperature: 110 °C

With a high maximum operating temperature, this TRIAC can withstand harsh environmental conditions and operate reliably in various applications.

Trigger Device Type: TRIAC

Being a TRIAC, this product is suitable for AC switching applications, making it a versatile choice for many different projects.

Minimum Operating Temperature: -40 °C

The wide range of operating temperatures allows this TRIAC to be used in both extreme cold and hot environments without compromising performance.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides good solderability and mechanical strength, making it easier to integrate this TRIAC into circuits.

Maximum RMS On-state Current: 2 A

With a high maximum on-state current, this TRIAC can handle heavy loads with ease, making it suitable for a wide range of applications.

Maximum DC Gate Trigger Voltage: 2.5 V

The low gate trigger voltage ensures that the TRIAC can be easily triggered with a low voltage signal, enhancing compatibility with various control systems.

Repetitive Peak Off-state Voltage: 100 V

With a high repetitive peak off-state voltage, this TRIAC can safely switch high voltage AC loads, making it a reliable choice for many applications.

Maximum Holding Current: 30 mA

The maximum holding current ensures that the TRIAC remains in the on-state even after the gate signal is removed, providing stability and reliability in operation.

Technical Specifications

Triode For Alternating Current (TRIAC) 2N6070A attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

20 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

30 mA

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

2 A

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trigger Device Type:

Trade Compliance

2N6070A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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