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TIC226E

Texas Instruments

TIC226E by Texas Instruments

TIC226E by Texas Instruments is a TRIAC with 8A RMS on-state current, 2mA max leakage current, and 110°C max operating temp. Ideal for AC power control applications due to its 500V repetitive peak off-state voltage and -40°C min operating temp.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 3,362 parts In-Stock

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Vyrian

USA . 3,006 parts In-Stock

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Halfin

Belgium . 83 parts In-Stock

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Parana Technologies

USA . 1,766 parts In-Stock

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$3.611

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$4.125

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DigiPath Technology Company

USA . 1,258 parts In-Stock

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$3.976

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$3.976

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ChromeModa Solutions

Germany . 6,756 parts In-Stock

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$4.057

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$3.327

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IDEA Electronic Components Group

UK . 2,054 parts In-Stock

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$4.057

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$3.651

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AZTECH Wire

Italy . 495 parts In-Stock

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$14.729

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One Stop Electronics

USA . 788 parts In-Stock

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$26.100

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Corphita

USA . 1,045 parts In-Stock

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Overview

Unleash the power of innovation with the TIC226E by Texas Instruments! As a leader in the industry, Texas Instruments delivers top-quality products that exceed expectations. The TIC226E falls under the Triode for Alternating Current (TRIAC) category, offering customers seamless integration and superior performance. With a maximum RMS On-state current of 8A and a maximum DC Gate Trigger Voltage of 2.5V, this TRIAC is perfect for a wide range of applications. Experience reliability, efficiency, and precision like never before with the TIC226E from Texas Instruments.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 50 mA

Allows for precise control of triggering the TRIAC, ensuring reliable and efficient operation.

Maximum Leakage Current: 2 mA

Low leakage current helps in maintaining the overall power efficiency of the device.

Maximum Operating Temperature: 110 °C

Wide operating temperature range allows for versatility in different applications and environments.

Trigger Device Type: TRIAC

TRIAC trigger device type is known for its reliability and performance in AC switching applications.

Minimum Operating Temperature: -40 °C

Ability to operate at low temperatures make this product suitable for a variety of environments.

Maximum RMS On-state Current: 8 A

High RMS on-state current handling capability makes it suitable for applications requiring high current switching.

Maximum DC Gate Trigger Voltage: 2.5 V

Low gate trigger voltage ensures efficient triggering and reduced power consumption.

Repetitive Peak Off-state Voltage: 500 V

High voltage handling capability makes this TRIAC suitable for high voltage applications.

Minimum Critical Rate of Rise of Commutation Voltage: 5 V/us

Ensures efficient commutation of the TRIAC, reducing electrical noise and interference.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

High rate of rise of off-state voltage ensures quick turn-off, reducing heat dissipation and improving efficiency.

Maximum Holding Current: 60 mA

High holding current ensures the TRIAC remains in the on-state without false triggering, improving reliability.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC226E attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

5 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

60 mA

Maximum Leakage Current:

2 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

500 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC226E Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-21-898-6583, 5961218986583

NIIN

218986583

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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