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TIC253N

Texas Instruments

TIC253N by Texas Instruments

TIC253N by Texas Instruments is a TRIAC with 20A RMS current, 800V repetitive peak off-state voltage, and 2.5V max DC gate trigger voltage. It operates b/w -40°C to 125°C and is ideal for AC power control applications requiring precise switching capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,660 parts In-Stock

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3,660

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Digiode

USA . 1,038 parts In-Stock

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1,038

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 240 parts In-Stock

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240

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One Stop Electronics

USA . 562 parts In-Stock

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$3.100

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562

$3.100

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Parana Technologies

USA . 30 parts In-Stock

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$4.294

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$4.720

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30

$4.294

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$4.720

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DigiPath Technology Company

USA . 849 parts In-Stock

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$4.728

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$4.350

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849

$4.728

$4.350

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ChromeModa Solutions

Germany . 3,795 parts In-Stock

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$4.825

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$3.956

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3,795

$4.825

$3.956

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IDEA Electronic Components Group

UK . 673 parts In-Stock

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$4.825

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$4.342

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673

$4.825

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AZTECH Wire

Italy . 649 parts In-Stock

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$18.664

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649

$18.664

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Semicontronic

India . 1,546 parts In-Stock

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$29.100

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$28.372

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$28.227

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$29.100

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Corphita

USA . 3,360 parts In-Stock

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Assy Fe

Spain . 30 parts In-Stock

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Overview

Unleash the power of reliable and efficient electrical control with the TIC253N by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch quality and performance in every product they create. The TIC253N falls under the Triode For Alternating Current (TRIAC) category, offering maximum RMS on-state current of 20A and repetitive peak off-state voltage of 800V. Perfect for a wide range of applications, this TRIAC provides exceptional value, reliability, and convenience to customers looking for seamless electrical control solutions. Elevate your projects with the TIC253N and experience the difference today.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 50 mA

The high maximum DC gate trigger current ensures reliable activation of the TRIAC, making it suitable for a wide range of applications.

Maximum Leakage Current: 2 mA

Low maximum leakage current helps in minimizing power loss and enhancing the efficiency of the device.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows the TRIAC to withstand elevated temperatures without degradation, ensuring long-term reliability.

Trigger Device Type: TRIAC

Being a TRIAC, this device offers bidirectional switching capabilities, making it versatile for AC power control applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures the device can function in cold environments, increasing its usability in various conditions.

Maximum RMS On-state Current: 20 A

The high maximum RMS on-state current rating allows the device to handle heavy loads, making it suitable for high-power applications.

Maximum DC Gate Trigger Voltage: 2.5 V

The low maximum DC gate trigger voltage enables efficient triggering of the device with minimal input power requirements.

Repetitive Peak Off-state Voltage: 800 V

The high repetitive peak off-state voltage rating ensures reliable insulation and protection against voltage spikes, enhancing device longevity.

Maximum Holding Current: 50 mA

The high maximum holding current ensures the device remains latched in the on-state even in the presence of noise or transient signals, improving stability.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC253N attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

20 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC253N Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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