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BTB16-600CW3G

Onsemi

BTB16-600CW3G by Onsemi

BTB16-600CW3G by Onsemi is a TRIAC with 16A RMS on-state current, 600V repetitive peak off-state voltage, and 35mA max DC gate trigger current. It is ideal for applications requiring precise AC power control such as dimmer switches, motor speed control, and heating regulation.

Median Price

$0.658

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 51 parts In-Stock

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$0.508

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Chip1Stop

Japan . 51 parts In-Stock

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$0.807

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$0.807

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Mouser Electronics

USA . 89 parts In-Stock

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$2.760

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$1.220

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$0.914

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$0.821

89

$2.760

$1.220

$0.914

$0.821

Verical

USA . 51 parts In-Stock

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$0.508

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51

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$0.508

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Digiode

USA . 2,261 parts In-Stock

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$0.474

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Vyrian

USA . 7,867 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 498 parts In-Stock

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Component Stockers USA

USA . 98 parts In-Stock

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$0.120

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$1.000

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Corphita

USA . 1,179 parts In-Stock

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$0.449

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Corohmni

South Africa . 97 parts In-Stock

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$0.499

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TANS Electronics

Latvia . 5,576 parts In-Stock

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Perfect Parts

USA . 2,432 parts In-Stock

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SupplyDigital Components

Austria . 2,311 parts In-Stock

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Problanco Electronics

Mexico . 1,853 parts In-Stock

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Northwest PG Solutions

USA . 1,630 parts In-Stock

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Native Components

USA . 1,305 parts In-Stock

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Kulean Microsystems

USA . 1,136 parts In-Stock

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UHIMA Technologies

Türkiye . 822 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 498 parts In-Stock

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498

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Glotronic Ltd.

UK . 398 parts In-Stock

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Kepictronics

USA . 95 parts In-Stock

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Overview

Enhance your electrical projects with the BTB16-600CW3G by Onsemi, a top-quality TRIAC that offers unmatched reliability and performance. Manufactured by Onsemi, a trusted name in the industry, this TRIAC is perfect for a wide range of applications. With its superior design and durability, the BTB16-600CW3G provides customers with exceptional value, benefits, and advantages. Upgrade your projects today with this high-quality TRIAC from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the triode, making it reliable for long-term use.

Maximum DC Gate Trigger Current: 35 mA

The high gate trigger current allows for efficient and reliable switching of the triode, ensuring smooth operation.

Configuration: SINGLE

The single configuration simplifies the setup and installation process of the triode, making it user-friendly.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows the triode to function effectively in a wide range of environments, enhancing its versatility.

Repetitive Peak Off-state Voltage: 600 V

The high off-state voltage rating ensures the triode can handle high voltage applications safely and reliably.

Technical Specifications

Triode For Alternating Current (TRIAC) BTB16-600CW3G attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

1000 V/us

Maximum DC Gate Trigger Current:

35 mA

Maximum DC Gate Trigger Voltage:

1.1 V

Maximum Holding Current:

50 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

16 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

BTB16-600CW3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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