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BTB12-600CW3G

Onsemi

BTB12-600CW3G by Onsemi

BTB12-600CW3G by Onsemi is a TRIAC with 12A RMS current, 600V repetitive peak off-state voltage, and 35mA DC gate trigger current. Ideal for AC power control applications due to its 4-quadrant logic level triac configuration and -40 °C to 125°C operating temperature range.

Median Price

$3.680

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 530 parts In-Stock

1+ parts

$3.680

100+ parts

$1.830

1k+ parts

$1.330

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530

$3.680

$1.830

$1.330

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Distributors (In-Stock)

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Digiode

USA . 1,629 parts In-Stock

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$2.774

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1,629

$2.774

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Vyrian

USA . 2,357 parts In-Stock

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2,357

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R&J Components

USA . 734 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 2,361 parts In-Stock

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$2.628

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2,361

$2.628

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Corohmni

South Africa . 393 parts In-Stock

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$2.920

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393

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TANS Electronics

Latvia . 8,196 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,995 parts In-Stock

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Problanco Electronics

Mexico . 5,867 parts In-Stock

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Microchip USA

USA . 5,015 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,663 parts In-Stock

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SupplyDigital Components

Austria . 4,375 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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Northwest PG Solutions

USA . 2,458 parts In-Stock

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Perfect Parts

USA . 1,767 parts In-Stock

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Native Components

USA . 898 parts In-Stock

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898

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UHIMA Technologies

Türkiye . 192 parts In-Stock

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Kulean Microsystems

USA . 23 parts In-Stock

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Overview

Discover the reliability and efficiency of the BTB12-600CW3G by Onsemi, a top-quality TRIAC perfect for a wide range of applications. Onsemi is known for their superior manufacturing standards, ensuring that each product meets stringent quality control measures. With its sturdy plastic/epoxy construction and 4-quadrant logic level trigger device type, this TRIAC offers unparalleled performance and durability. Whether you're in need of precise control over alternating current or seeking a reliable component for your electronic projects, the BTB12-600CW3G delivers exceptional value and benefits that will exceed your expectations. Elevate your projects with the trusted quality of Onsemi's TRIAC technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection for the internal components of the TRIAC, ensuring a longer lifespan.

Maximum DC Gate Trigger Current: 35 mA

A high maximum DC gate trigger current of 35 mA allows for reliable and consistent triggering of the TRIAC, ensuring stable operation in a variety of applications.

Configuration: SINGLE

The single configuration simplifies the design and wiring of the TRIAC circuit, making it easier to integrate into different systems.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this TRIAC can withstand high temperatures without compromising its performance, making it suitable for a wide range of environments.

Repetitive Peak Off-state Voltage: 600 V

The high repetitive peak off-state voltage of 600 V ensures safe and reliable operation, making this TRIAC ideal for applications requiring high voltage handling capabilities.

Technical Specifications

Triode For Alternating Current (TRIAC) BTB12-600CW3G attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

1500 V/us

Maximum DC Gate Trigger Current:

35 mA

Maximum DC Gate Trigger Voltage:

1.7 V

Maximum Holding Current:

45 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

BTB12-600CW3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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