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TIC201D

Texas Instruments

TIC201D by Texas Instruments

TIC201D by Texas Instruments is a TRIAC with 2.5A RMS on-state current, 400V repetitive peak off-state voltage, and -40 to 110°C operating temperature range. Ideal for AC power control applications requiring precise triggering and low leakage current.

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Vyrian

USA . 5,061 parts In-Stock

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Digiode

USA . 2,658 parts In-Stock

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Digital Electronic Gebert Verwaltungs UG

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 171 parts In-Stock

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Holdelec - ElecDif-Pro

France . 52 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Fibra_Brandt Electronic GMBH

Germany . 12 parts In-Stock

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GES GmbH

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LittleDiode

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Parana Technologies

USA . 2,367 parts In-Stock

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$3.603

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ChromeModa Solutions

Germany . 5,243 parts In-Stock

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IDEA Electronic Components Group

UK . 187 parts In-Stock

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One Stop Electronics

USA . 1,016 parts In-Stock

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AZTECH Wire

Italy . 197 parts In-Stock

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Kepictronics

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Corphita

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DigiPath Technology Company

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Cyclops Electronics Ltd (Excess)

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Assy Fe

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Overview

Experience superior performance and reliability with the TIC201D by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments offers a high-quality Triode For Alternating Current (TRIAC) that is perfect for a wide range of applications. With a maximum RMS On-state Current of 2.5A and a Repetitive Peak Off-state Voltage of 400V, this trigger device provides exceptional value and efficiency to customers. Say goodbye to downtime and hello to seamless operation with the TIC201D.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 25 mA

With a high maximum DC gate trigger current, this product is able to handle a wide range of input signals effectively, ensuring reliable operation.

Maximum Leakage Current: 1 mA

The low maximum leakage current of 1 mA indicates minimal loss of current when the device is in the off-state, leading to improved energy efficiency.

Maximum Operating Temperature: 110 °C

With a high maximum operating temperature of 110 °C, this product can withstand elevated temperatures, making it suitable for a wide range of operating environments.

Trigger Device Type: TRIAC

The TRIAC trigger device type offers bidirectional control of current flow, allowing for versatile and efficient operation in AC circuits.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C ensures reliable performance even in cold environments, making this product suitable for a variety of applications.

Maximum RMS On-state Current: 2.5 A

With a high maximum RMS on-state current of 2.5 A, this product is capable of handling high current loads, making it suitable for demanding applications.

Maximum DC Gate Trigger Voltage: 2.5 V

The low maximum DC gate trigger voltage of 2.5 V ensures efficient operation with minimal power consumption, making this product an energy-efficient choice.

Repetitive Peak Off-state Voltage: 400 V

The high repetitive peak off-state voltage of 400 V allows this product to safely control high voltage circuits, making it suitable for a variety of industrial applications.

Minimum Critical Rate of Rise of Commutation Voltage: 2 V/us

The minimum critical rate of rise of commutation voltage of 2 V/us ensures stable and reliable switching performance, making this product ideal for high-speed applications.

Minimum Critical Rate of Rise of Off-state Voltage: 50 V/us

The minimum critical rate of rise of off-state voltage of 50 V/us indicates fast turn-off characteristics, making this product suitable for applications requiring rapid switching.

Maximum Holding Current: 30 mA

With a high maximum holding current of 30 mA, this product can maintain its state effectively without requiring continuous triggering, enhancing its reliability in various operating conditions.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC201D attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

2 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

30 mA

Maximum Leakage Current:

1 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

2.5 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC201D Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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