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DTA08E

Onsemi

DTA08E by Onsemi

DTA08E by Onsemi is a TRIAC with 1.5V max on-state voltage, 0.8A max RMS current, and 400V repetitive peak off-state voltage. It is used in AC power control applications due to its 10mA max gate trigger current and -40 to 125 °C operating temperature range.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,290 parts In-Stock

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Vyrian

USA . 1,408 parts In-Stock

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Native Components

USA . 900 parts In-Stock

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$0.135

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$0.130

900

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Northwest PG Solutions

USA . 310 parts In-Stock

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$0.149

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$0.131

SupplyDigital Components

Austria . 7,974 parts In-Stock

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Problanco Electronics

Mexico . 5,537 parts In-Stock

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TANS Electronics

Latvia . 5,452 parts In-Stock

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Kulean Microsystems

USA . 2,489 parts In-Stock

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Corphita

USA . 1,236 parts In-Stock

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Corohmni

South Africa . 371 parts In-Stock

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UHIMA Technologies

Türkiye . 6 parts In-Stock

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Overview

Unlock the power of seamless control with the DTA08E by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality products that are designed to exceed expectations. The DTA08E falls under the category of Triode For Alternating Current (TRIAC), making it ideal for a wide range of applications. Whether you need precise voltage control or efficient current regulation, this product offers unmatched value and benefits. Experience reliability, performance, and innovation with the DTA08E by Onsemi.

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

Low on-state voltage ensures efficient operation and minimizes power losses.

Maximum DC Gate Trigger Current: 10 mA

Allows for precise control and triggering of the TRIAC.

Maximum Leakage Current: 0.1 mA

Low leakage current helps in maintaining the stability and reliability of the device.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows for use in various environments.

Trigger Device Type: TRIAC

Being a TRIAC, it is suitable for AC applications and offers bidirectional control.

Minimum Operating Temperature: -40 °C

Good tolerance to low temperatures enables usage in cold environments.

Maximum RMS On-state Current: 0.8 A

High on-state current handling capability makes it suitable for medium power applications.

Maximum DC Gate Trigger Voltage: 1.5 V

Low gate trigger voltage ensures efficient triggering and control of the device.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage rating allows for handling of higher voltage applications.

Minimum Critical Rate of Rise of Commutation Voltage: 1 V/us

Ensures smooth switching operation and minimizes voltage spikes during commutation.

Maximum Holding Current: 10 mA

Sufficient holding current capability ensures stable operation once triggered.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA08E attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

1 V/us

Maximum DC Gate Trigger Current:

10 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

10 mA

Maximum Leakage Current:

.1 mA

Maximum On-state Voltage:

1.5 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA08E Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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