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TICP206D

Texas Instruments

TICP206D by Texas Instruments

TICP206D by Texas Instruments is a TRIAC with max DC gate trigger current of 8000 mA, max leakage current of 0.01 mA, and max operating temp of 125°C. Ideal for applications requiring a trigger device with a max RMS on-state current of 1.5 A and repetitive peak off-state voltage of 400 V.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Vyrian

USA . 4,581 parts In-Stock

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Digiode

USA . 4,118 parts In-Stock

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Pegasus Components GmbH

Germany . 86 parts In-Stock

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LittleDiode

UK . 1 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1 parts In-Stock

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Parana Technologies

USA . 85 parts In-Stock

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$3.628

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$4.140

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ChromeModa Solutions

Germany . 6,287 parts In-Stock

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$4.076

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$3.342

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IDEA Electronic Components Group

UK . 1,153 parts In-Stock

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$3.668

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AZTECH Wire

Italy . 511 parts In-Stock

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One Stop Electronics

USA . 600 parts In-Stock

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Corphita

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DigiPath Technology Company

USA . 1,847 parts In-Stock

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$3.675

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Overview

Enhance your electronic projects with the TICP206D by Texas Instruments, a top-quality Triode For Alternating Current (TRIAC) that guarantees superior performance and reliability. Manufactured by the renowned brand Texas Instruments, this TRIAC offers a wide range of applications from lighting control to motor speed regulation. With a maximum operating temperature of 125°C and a repetitive peak off-state voltage of 400V, the TICP206D provides exceptional value, benefits, and advantages to customers seeking high-quality components for their electrical projects. Upgrade your designs with the TICP206D and experience unmatched quality and performance.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 8000 mA

Allows for reliable and efficient gate triggering, ensuring proper operation of the TRIAC.

Maximum Leakage Current: 0.01 mA

Low leakage current helps in reducing power loss and improving overall efficiency of the device.

Maximum Operating Temperature: 125 °C

Capable of operating in high temperature environments, increasing the versatility of the TRIAC.

Trigger Device Type: TRIAC

Being a TRIAC, it is suitable for AC applications and provides bidirectional control of current flow.

Minimum Operating Temperature: -60 °C

Can also operate in low temperature conditions, making it suitable for a wide range of applications.

Maximum RMS On-state Current: 1.5 A

Capable of handling higher current loads, making it suitable for various electrical applications.

Maximum DC Gate Trigger Voltage: 2.5 V

Low trigger voltage requirement allows for easier control and operation of the TRIAC.

Repetitive Peak Off-state Voltage: 400 V

Provides a high off-state voltage rating for better isolation and protection in AC circuits.

Minimum Critical Rate of Rise of Commutation Voltage: 2.2 V/us

Helps in smooth switching and commutation of the device, improving overall performance.

Minimum Critical Rate of Rise of Off-state Voltage: 50 V/us

Ensures fast turn-off capability, reducing the risk of false triggering and improving reliability.

Maximum Holding Current: 30 mA

The holding current specification ensures stable operation and prevents unintended turn-off of the TRIAC.

Technical Specifications

Triode For Alternating Current (TRIAC) TICP206D attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

2.2 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

8000 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

30 mA

Maximum Leakage Current:

.01 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Maximum RMS On-state Current:

1.5 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

TICP206D Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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