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MAC97A4

Onsemi

MAC97A4 by Onsemi

MAC97A4 by Onsemi is a TRIAC with 3 terminals and a max DC gate trigger current of 5 mA. It operates in temperatures ranging from -40 to 110 °C, with a repetitive peak off-state voltage of 200 V. Ideal for applications requiring precise switching control in various electronic devices.

Median Price

$0.230

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

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Component Electronics Inc.

Canada . 280 parts In-Stock

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$0.230

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$0.170

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Vyrian

USA . 2,201 parts In-Stock

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Semi Source

USA . 1,345 parts In-Stock

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Digiode

USA . 836 parts In-Stock

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836

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Prism Electronics

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A&K Electronics

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Rotakorn

Sweden . 172 parts In-Stock

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Bristol Electronics

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R&J Components

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ICP Electronique

France . 155 parts In-Stock

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Resion

USA . 15 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 191 parts In-Stock

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SupplyDigital Components

Austria . 7,176 parts In-Stock

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Kulean Microsystems

USA . 6,083 parts In-Stock

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Problanco Electronics

Mexico . 5,792 parts In-Stock

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TANS Electronics

Latvia . 3,446 parts In-Stock

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UHIMA Technologies

Türkiye . 891 parts In-Stock

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Perfect Parts

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Corphita

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Assy Fe

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Overview

Unlock the power of efficient and reliable circuit control with the MAC97A4 by Onsemi. Crafted with precision and quality, this TRIAC offers seamless operation in a variety of applications. Whether you're looking to enhance lighting systems or optimize heating controls, the MAC97A4 delivers superior performance. Trust in Onsemi's reputation for excellence and experience the value this product brings to your projects. Upgrade your electronics with the MAC97A4 and discover a world of possibilities at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the internal components of the TRIAC, making it suitable for various industrial applications.

Maximum DC Gate Trigger Current: 5 mA

Low gate trigger current ensures efficient and reliable operation of the TRIAC, reducing the risk of false triggering.

Configuration: SINGLE

Single configuration simplifies the setup and integration of the TRIAC into electrical circuits, making it user-friendly.

Package Shape: ROUND

Round package shape allows for easy mounting and installation of the TRIAC in different electronic devices and systems.

Terminal Form: THROUGH-HOLE

Through-hole terminal form enables secure connections and soldering of the TRIAC onto circuit boards, ensuring reliable electrical contact.

Maximum Leakage Current: 0.1 mA

Low leakage current minimizes power loss and ensures energy efficiency during the off-state of the TRIAC.

No. of Terminals: 3

Three terminals provide necessary connections for controlling the TRIAC, offering flexibility in circuit design and functionality.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides compact and space-saving design for the TRIAC, suitable for applications with limited space constraints.

Maximum Operating Temperature: 110 °C

High maximum operating temperature allows the TRIAC to perform reliably in demanding environments without overheating.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

4 quadrant logic level TRIAC offers precise control and switching capabilities, making it ideal for various industrial and consumer electronics applications.

Minimum Operating Temperature: -40 °C

Wide temperature range (-40 to 110 °C) ensures the TRIAC can operate effectively in both extreme cold and hot environments.

Terminal Finish: TIN SILVER COPPER

Terminal finish of tin, silver, and copper provides excellent conductivity and corrosion resistance, ensuring long-term performance and reliability.

Terminal Position: BOTTOM

Bottom terminal position simplifies the installation and connection of the TRIAC in electronic circuits, enhancing user convenience.

Maximum RMS On-state Current: 0.6 A

High maximum RMS on-state current capacity allows the TRIAC to handle heavy loads and high-current applications with ease.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage ensures efficient and reliable triggering of the TRIAC, enabling precise control over switching operations.

Repetitive Peak Off-state Voltage: 200 V

Repetitive peak off-state voltage rating of 200V provides protection against voltage surges and spikes, ensuring the safety of connected devices.

Minimum Critical Rate of Rise of Off-state Voltage: 25 V/us

Fast minimum rate of rise of off-state voltage helps in preventing voltage breakdown and leakage currents, enhancing the overall performance and reliability of the TRIAC.

Maximum Holding Current: 10 mA

High maximum holding current ensures the TRIAC remains in the on-state even in the presence of fluctuating loads, guaranteeing stable and continuous operation.

Technical Specifications

Triode For Alternating Current (TRIAC) MAC97A4 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

25 V/us

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

10 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

Maximum Leakage Current:

.1 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

.6 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

MAC97A4 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-01-190-4782, 5961011904782

NIIN

011904782

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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