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2N6344

Onsemi

2N6344 by Onsemi

The Onsemi 2N6344 is a TRIAC with max. DC gate trigger current of 100mA, max. RMS on-state current of 8A, and repetitive peak off-state voltage of 600V. It is used in applications requiring AC switching such as dimmers, motor speed controllers, and heating control systems.

Median Price

$3.000

Lifecycle Status

Suppliers In-Stock

13

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1k+

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TEDSS.com

USA . 84 parts In-Stock

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Digiode

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Vyrian

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Legend Electronics Inc.

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Electronic Expediters

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Speed Components Ltd

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R&J Components

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Bristol Electronics

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Electronics Depot

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LittleDiode

UK . 10 parts In-Stock

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MRC Electronics

USA . 6 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 5 parts In-Stock

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Mil-Aero Solutions, Inc.

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Benley Electronics

USA . 22 parts In-Stock

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$0.450

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Northwest PG Solutions

USA . 3,324 parts In-Stock

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$1.079

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Corohmni

South Africa . 195 parts In-Stock

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Advanced Electronics

New Zealand . 870 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,422 parts In-Stock

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SupplyDigital Components

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Kulean Microsystems

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Problanco Electronics

Mexico . 1,662 parts In-Stock

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Native Components

USA . 1,144 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 319 parts In-Stock

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TANS Electronics

Latvia . 70 parts In-Stock

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Assy Fe

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Overview

Enhance your electrical projects with the reliable 2N6344 TRIAC by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and performance in every product. The 2N6344 is perfect for a wide range of applications, offering unmatched value and benefits to customers. From lighting control to motor speed regulation, this TRIAC provides seamless operation and efficient power management. Trust Onsemi's expertise and choose the 2N6344 for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the product lightweight and durable, ensuring easy handling and long-lasting performance.

Maximum DC Gate Trigger Current: 100 mA

The high maximum DC gate trigger current allows for reliable and efficient triggering of the TRIAC, ensuring optimal performance in various applications.

Configuration: SINGLE

The single configuration simplifies the design and reduces complexity, making it a cost-effective choice for applications requiring a single TRIAC.

Package Shape: RECTANGULAR

The rectangular package shape provides ease of mounting and installation, offering convenience in different setups.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for easy and secure soldering, ensuring a reliable connection in the circuit.

Maximum Leakage Current: 2 mA

The low maximum leakage current helps in minimizing power loss and enhancing the efficiency of the TRIAC.

No. of Terminals: 3

The three terminals provide flexibility in circuit connections and enable versatile applications of the TRIAC.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers a secure and stable mounting option, ensuring reliable performance in different environments.

Maximum Operating Temperature: 100 °C

The high maximum operating temperature allows the TRIAC to function effectively in demanding conditions without overheating.

Trigger Device Type: TRIAC

Being a TRIAC, the product offers bidirectional control of current flow, making it suitable for AC applications that require switching capabilities.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures that the TRIAC can operate in a wide range of temperature conditions, making it versatile and reliable.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and corrosion resistance, ensuring a secure and durable connection in the circuit.

Terminal Position: SINGLE

The single terminal position simplifies the installation process and improves overall reliability by reducing the chances of connection errors.

Maximum RMS On-state Current: 8 A

The high maximum RMS on-state current capacity allows the TRIAC to handle high current loads efficiently, making it suitable for various power control applications.

Maximum DC Gate Trigger Voltage: 2.5 V

The low maximum DC gate trigger voltage ensures efficient triggering of the TRIAC, minimizing power consumption and enhancing performance.

Case Connection: MAIN TERMINAL 2

The specific case connection design simplifies the wiring process and ensures proper connection of the TRIAC within the circuit.

Repetitive Peak Off-state Voltage: 600 V

The high repetitive peak off-state voltage rating allows the TRIAC to withstand high voltage spikes and surges, ensuring reliable operation in potentially harsh environments.

Maximum Holding Current: 75 mA

The high maximum holding current ensures that the TRIAC remains latched in the conducting state, providing stable operation in various applications.

Peak Reflow Temperature °C: 235

The high peak reflow temperature rating allows for robust soldering processes, ensuring a strong and reliable connection in the circuit during assembly.

Technical Specifications

Triode For Alternating Current (TRIAC) 2N6344 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

100 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

75 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

2N6344 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-01-043-8419, 5961010438419

NIIN

010438419

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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