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2N6344A

Onsemi

2N6344A by Onsemi

2N6344A by Onsemi is a TRIAC with max. DC gate trigger current of 100mA, max. RMS on-state current of 12A, and repetitive peak off-state voltage of 600V. It is used in applications requiring AC power control like dimmers, motor speed controllers, and heating control systems.

Median Price

$9.830

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 510 parts In-Stock

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$9.830

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Digiode

USA . 1,280 parts In-Stock

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Vyrian

USA . 646 parts In-Stock

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First Choice Components Inc.

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Electronics Depot

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ZD Integrated Circuits Inc.

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ACDS - Activité Composants Distribution Service

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Distributors (Availability)

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Native Components

USA . 1,224 parts In-Stock

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$1.242

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Northwest PG Solutions

USA . 2,854 parts In-Stock

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$1.366

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$3.828

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$3.483

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$3.139

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$3.828

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Corohmni

South Africa . 199 parts In-Stock

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Kepictronics

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Problanco Electronics

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Kulean Microsystems

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TANS Electronics

Latvia . 3,022 parts In-Stock

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SupplyDigital Components

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Corphita

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Perfect Parts

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UHIMA Technologies

Türkiye . 316 parts In-Stock

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Assy Fe

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Overview

Discover the power and reliability of the 2N6344A by Onsemi. This TRIAC device offers seamless switching for a wide range of applications, from lighting control to motor speed regulation. With Onsemi's reputation for high-quality manufacturing, customers can trust in the durability and performance of this product. Experience the value and benefits of the 2N6344A, providing efficient operation and precise control in any electrical system. Elevate your projects with the advantages that this TRIAC device brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and reliability in various operating conditions.

Maximum DC Gate Trigger Current: 100 mA

Allows for precise control and triggering of the device.

Configuration: SINGLE

Simplifies the installation process and reduces complexity.

Package Shape: RECTANGULAR

Facilitates easy mounting and integration into circuit designs.

Terminal Form: THROUGH-HOLE

Enables secure and stable connections on circuit boards.

Maximum Leakage Current: 2 mA

Ensures minimal power loss and efficient operation.

No. of Terminals: 3

Provides necessary connection points for proper functionality.

Package Style (Meter): FLANGE MOUNT

Allows for convenient mounting and positioning in applications.

Maximum Operating Temperature: 110 °C

Ensures reliable performance even in high temperature environments.

Trigger Device Type: TRIAC

Provides efficient switching and control of alternating current.

Minimum Operating Temperature: -40 °C

Ensures reliability in cold temperature conditions.

Terminal Finish: TIN LEAD

Provides a reliable and corrosion-resistant finish for the terminals.

Terminal Position: SINGLE

Simplifies the connection process and reduces wiring complexity.

Maximum RMS On-state Current: 12 A

Handles high current loads effectively for various applications.

Maximum DC Gate Trigger Voltage: 2.5 V

Allows for low-voltage triggering and control of the device.

Case Connection: MAIN TERMINAL 2

Provides a designated connection point for the main terminal.

Repetitive Peak Off-state Voltage: 600 V

Can withstand high voltage levels without breakdown or damage.

Maximum Holding Current: 75 mA

Ensures stable operation and holding of the device in the off-state.

Peak Reflow Temperature °C: 235

Can withstand high temperature reflow processes during assembly.

Technical Specifications

Triode For Alternating Current (TRIAC) 2N6344A attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

100 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

75 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

2N6344A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-01-043-8419, 5961010438419

NIIN

010438419

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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